FSL110D3 INTERSIL [Intersil Corporation], FSL110D3 Datasheet

FSL110D3

Manufacturer Part Number

FSL110D3

Description

3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.FSL110D3.pdf (8 pages)

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3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

Formerly available as type TA17616.

10K

100K

RAD LEVEL

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

4-1

PART NUMBER/BRAND

FSL110D1

FSL110D3

FSL110R1

FSL110R3

FSL110R4

Features

• 3.5A, 100V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

Package

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 0.3nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E14 Neutrons/cm

for 3E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

FSL110D, FSL110R

= 0.600

TO-205AF

with

DSS

Related parts for FSL110D3

FSL110D3 Summary of contents

Page 1

... MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSL110D1 10K TXV FSL110D3 100K Commercial FSL110R1 100K TXV FSL110R3 100K Space FSL110R4 Formerly available as type TA17616. 4-1 ...

Page 2

Absolute Maximum Ratings T C Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage V Reverse Recovery Time Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate to Body Leakage (Notes 2, ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q 12V CHARGE FIGURE 5. BASIC GATE CHARGE ...

Page 5

Typical Performance Curves Test Circuits and Waveforms ELECTRONIC SWITCH OPENS L + CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE ØD Ø Ø All Intersil semiconductor products are manufactured, assembled and tested under ...

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