HN58V65A-SR RENESAS [Renesas Technology Corp], HN58V65A-SR Datasheet
HN58V65A-SR
Related parts for HN58V65A-SR
HN58V65A-SR Summary of contents
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... HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version Description Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology ...
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... Software data protection • Write protection by RES pin (only the HN58V66A series) • Operating temperature range: HN58V65AI/HN58V66AI Series: −40 to +85°C HN58V65A-SR/HN58V66A-SR Series: −20 to +85°C • There are also lead free products. Ordering Information Access time 2.7 V ≤ ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Pin Arrangement HN58V65API Series HN58V65AFPI Series RDY/Busy A12 A11 A10 I/O7 19 I/O0 11 I/O6 18 I/O1 I/ I/ (Top view) HN58V66API Series HN58V66AFPI Series ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Pin Description Pin name A0 to A12 I/ RDY/Busy RES Note: 1. This function is supported by only the HN58V66A series. Block Diagram Note: 1. This function is supported by only the HN58V66A series High voltage generator V SS RES ...
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... V IH × × × V High-Z IL Symbol V CC Vin HN58V65AI/HN58V66AI Topr HN58V65A-SR/HN58V66A-SR Topr Tstg I/O Dout High-Z Din OL High-Z Dout (I/O7) High-Z Value Unit –0 –0. +7.0* °C –40 to +85 °C –20 to +85 ° ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Recommended DC Operating Conditions Parameter Symbol Supply voltage Input voltage Operating temperature Topr HN58V65AI/HN58V66AI HN58V65A-SR/HN58V66A-SR min: –1.0 V for pulse width ≤ 50 ns. Notes 3.0 V for V = 3 1.0 V for pulse width ≤ 50 ns. ...
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... RR Rev.3.00, Feb.02.2004, page Min Typ Max Unit (Ta = −40 to +85° 2.7 to 5.5 V: HN58V65AI/HN58V66AI 2.7 to 5.5 V: HN58V65A-SR/HN58V66A-SR 2.7 to 3.6 V (RES pin* ) HN58V65AI/HN58V66AI HN58V65A-SR/HN58V66A-SR -10 Min Max Unit Test conditions 100 ns 100 ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Write Cycle 1 (2.7 ≤ V < 4 Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time OE hold time Data setup time Data hold time ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Read Cycle 2 (4.5 ≤ V ≤ 5 Parameter Symbol Address to output delay t ACC CE to output delay output delay t OE Address to output hold (CE) high to output float RES low to output float DFR RES to output delay Rev ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Write Cycle 2 (4.5 ≤ V ≤ 5 Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time OE hold time Data setup time Data hold time ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES * 2 Rev.3.00, Feb.02.2004, page ACC Data out valid DFR ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Byte Write Timing Waveform(1) (WE Controlled) Address Din High-Z RDY/Busy t RES RES * Rev.3.00, Feb.02.2004, page OES OEH High-Z ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Byte Write Timing Waveform(2) (CE Controlled) Address Din High-Z RDY/Busy t RES RES * Rev.3.00, Feb.02.2004, page OES t OEH High-Z ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Page Write Timing Waveform(1) (WE Controlled) *7 Address A0 to A12 OES Din t DB High-Z RDY/Busy t RP RES * 2 t RES V CC Rev.3.00, Feb.02.2004, page BLC t OEH ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Page Write Timing Waveform(2) (CE Controlled) *8 Address A0 to A12 OES Din t DB High-Z RDY/Busy t RP RES * 2 t RES V CC Rev.3.00, Feb.02.2004, page BLC t OEH ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Data Polling Timing Waveform Address OEH Din X I/O7 Rev.3.00, Feb.02.2004, page Dout OES t DW Dout X ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Toggle Bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Software Data Protection Timing Waveform(1) (in protection mode Address 1555 Data AA Software Data Protection Timing Waveform(2) (in non-protection mode Address 1555 0AAA Data AA 55 Rev.3.00, Feb.02.2004, page BLC 1555 Write address 0AAA A0 Write data ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can be written in the same manner. Each additional byte load cycle must be started within 30 µs from the preceding falling edge CE. When kept high for 100 µ ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series WE, CE Pin Operation During a write cycle, addresses are latched by the falling edge CE, and data is latched by the rising edge CE. Write/Erase Endurance and Data Retention Time 5 The endurance is 10 cycles in case of the page programming and 10 programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 2. Data protection at V on/off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may CC act as a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in an unprogrammable state while the CPU unstable state ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 2.2 Protection by RES (only the HN58V66A series) The unprogrammable state can be realized by that the CPU’s reset signal inputs directly to the EEPROM’s RES pin. RES should be kept V programming operation when RES becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series 3. Software data protection To prevent unintentional programming caused by noise generated by external circuits, this device has the software data protection function. In software data protection mode, 3 bytes of data must be input before write data as follows. And these bytes can switch the non-protection mode to the protection mode ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions HN58V65API Series HN58V66API Series (DP-28, DP-28V) 35.6 36.5 Max 28 1 1.2 1.9 Max 2.54 ± 0.25 Rev.3.00, Feb.02.2004, page 0.48 ± 0.10 0 ˚ – 15 ˚ Package Code JEDEC JEITA Mass (reference value) Unit: mm 15.24 + 0.11 0.25 – 0.05 DP-28, DP-28V — Conforms 4.6 g ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions (cont) HN58V65AFPI Series HN58V66AFPI Series (FP-28D, FP-28DV) 18.3 18.8 Max 28 1 1.12 Max 1.27 *0.40 ± 0.08 0.38 ± 0.06 *Dimension including the plating thickness Base material dimension Rev.3.00, Feb.02.2004, page 11.8 ± 0.3 1.0 ± 0.2 0.15 0.20 M Package Code JEDEC JEITA Mass (reference value) Unit: mm 1.7 0˚ ...
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... HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Package Dimensions (cont) HN58V65ATI Series HN58V66ATI Series HN58V65AT-SR Series HN58V66AT-SR Series (TFP-28DB, TFP-28DBV) 8.00 8.20 Max 0.55 *0.22 ± 0.08 0.10 0.20 ± 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension Rev.3.00, Feb.02.2004, page 13.40 ± 0.30 0 ˚ – 5 ˚ Package Code ...
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... Revision History HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series Data Sheet Rev. Date Contents of Modification Page Description 0.0 Mar. 12, 1997 Initial issue 1.0 Aug. 29, 1997 Addition of HN58V65A-SR/HN58V66A- Characteristics 11 Timing Waveform 19 Functional Description 2.0 Oct. 31, 1997 6 DC Characteristics 3.00 Feb. 02, 2004 2 Ordering Information 24-26 Package Dimensions Input pulse level: 0 ...
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Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...