HN58V65A-SR RENESAS [Renesas Technology Corp], HN58V65A-SR Datasheet - Page 19

• Manufacturer Part Number: HN58V65A-SR
• Description: 64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
• Manufacturer: RENESAS [Renesas Technology Corp]

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30 µs from the preceding falling edge of WE or CE. When
CE or WE is kept high for 100 µs after data input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
Data Polling
Data polling indicates the status that the EEPROM is in a write cycle or not. If EEPROM is set to read
mode during a write cycle, an inversion of the last byte of data outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows status of the EEPROM to be determined. The RDY/Busy signal has high
impedance except in write cycle and is lowered to V
after the first write signal. At the end of a write
OL
cycle, the RDY/Busy signal changes state to high impedance.
RES Signal (only the HN58V66A series)
When RES is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by
keeping RES low when V
is switched. RES should be high during read and programming because it
CC
doesn’t provide a latch function.
V
CC
Read inhibit
Read inhibit
RES
Program inhibit
Program inhibit
Rev.3.00, Feb.02.2004, page 19 of 26