HN58X2402SFPIAG RENESAS [Renesas Technology Corp], HN58X2402SFPIAG Datasheet - Page 15

• Manufacturer Part Number: HN58X2402SFPIAG
• Manufacturer: RENESAS [Renesas Technology Corp]

HN58X2402SFPIAG/HN58X2404SFPIAG
Notes
Data protection at V
When V
trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this
EEPROM has a power on reset function. Be careful of the notices described below in order for the power on reset
function to operate correctly.
• SCL and SDA should be fixed to V
• V
• V
• V
Write/Erase Endurance and Data retention Time
The endurance is 10
failure rate). The data retention time is more than 10 years when a device is page-programmed less than 10
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than 50 ns. Be
careful not to allow noise of width more than 50 ns.
Rev.4.00, Jul.13.2005, page 15 of 16
on/off may cause the trigger for the unintentional programming.
programming mode.
CC
CC
CC
should be turned off after the EEPROM is placed in a standby state.
should be turned on from the ground level(V
turn on speed should be longer than 10 µs.
CC
is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc) may act as a
5
cycles in case of page programming and 10
CC
On/Off
CC
or V
SS
during V
SS
) in order for the EEPROM not to enter the unintentional
CC
on/off. Low to high or high to low transition during V
4
cycles in case of byte programming (1% cumulative
4
cycles.
CC