AT49BV001A ATMEL Corporation, AT49BV001A Datasheet - Page 2

no-image

AT49BV001A

Manufacturer Part Number
AT49BV001A
Description
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Manufacturer
ATMEL Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT49BV001A-55JI
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT49BV001A55TI
Quantity:
11
Part Number:
AT49BV001AN-55JI
Manufacturer:
VIA
Quantity:
42
Part Number:
AT49BV001AN-55JI
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT49BV001AN-55JI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV001AN-55TI
Manufacturer:
ATMEL
Quantity:
53
Part Number:
AT49BV001AN-55TI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV001AN-55TU
Manufacturer:
ATMEL
Quantity:
1 831
Part Number:
AT49BV001AN-55VI
Manufacturer:
ATMEL
Quantity:
167
Company:
Part Number:
AT49BV001AN-55VI
Quantity:
839
Part Number:
AT49BV001ANT-55JI
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT49BV001ANT-55JI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV001ANT-55JU
Manufacturer:
Atmel
Quantity:
10 000
Part Number:
AT49BV001ANT-55TI
Manufacturer:
ATMEL
Quantity:
1 450
Part Number:
AT49BV001ANT-55TI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
AT49BV001ANT-55VI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Block Diagram
2
AT49BV001A(N)(T)
When the device is deselected, the CMOS standby current is less than 50 µA. For the
AT49BV001AN(T), pin 1 for the PLCC package and pin 9 for the TSOP package are no con-
nect pins. To allow for simple in-system reprogrammability, the AT49BV001A(N)(T) does not
require high input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to reading from
an EPROM; it has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming
the AT49BV001A(N)(T) is performed by erasing a block of data and then programming on a
byte by byte basis. The byte programming time is a fast 30 s. The end of a program cycle can
be optionally detected by the DATA polling feature. Once the end of a byte program cycle has
been detected, a new access for a read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device internally con-
trols the erase operations. There are two 8K byte parameter block sections, two main memory
blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is enabled by a
command sequence. The 16K-byte boot block section includes a reprogramming lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code, and
when the feature is enabled, the boot sector is protected from being reprogrammed.
In the AT49BV001AN(T), once the boot block programming lockout feature is enabled, the
contents of the boot block are permanent and cannot be changed. In the AT49BV001A(T),
once the boot block programming lockout feature is enabled, the contents of the boot block
cannot be changed with input voltage levels of 5.5 volts or less.
ADDRESS
INPUTS
RESET
GND
VCC
WE
OE
CE
Y DECODER
X DECODER
CONTROL
LOGIC
DATA INPUTS/OUTPUTS
DATA LATCHES
AT49BV001A(N)
INPUT/OUTPUT
MAIN MEMORY
MAIN MEMORY
BOOT BLOCK
PARAMETER
PARAMETER
(64K BYTES)
(32K BYTES)
(16K BYTES)
(8K BYTES)
(8K BYTES)
PROGRAM
Y-GATING
I/O7 - I/O0
BUFFERS
BLOCK 2
BLOCK 1
BLOCK 2
BLOCK 1
8
1FFFF
10000
0FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
DATA INPUTS/OUTPUTS
AT49BV001A(N)T
DATA LATCHES
INPUT/OUTPUT
MAIN MEMORY
MAIN MEMORY
BOOT BLOCK
PARAMETER
PARAMETER
(16K BYTES)
(32K BYTES)
(64K BYTES)
(8K BYTES)
(8K BYTES)
PROGRAM
Y-GATING
I/O7 - I/O0
BUFFERS
BLOCK 1
BLOCK 2
BLOCK 1
BLOCK 2
8
3364C–FLASH–9/03
1FFFF
1C000
1BFFF
1A000
19FFF
18000
17FFF
10000
0FFFF
00000

Related parts for AT49BV001A