AT49BV001A ATMEL Corporation, AT49BV001A Datasheet - Page 3

• Manufacturer Part Number: AT49BV001A
• Description: 1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
• Manufacturer: ATMEL Corporation

Device
Operation
3364C–FLASH–9/03
READ: The AT49BV001A(N)(T) is accessed like an EPROM. When CE and OE are low and
WE is high, the data stored at the memory location determined by the address pins is asserted
on the outputs. The outputs are put in the high impedance state whenever CE or OE is high.
This dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or
standby mode depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the Command Definitions table. The command sequences are written
by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high.
The address is latched on the falling edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard microprocessor write timings are used.
The address locations used in the command sequences are not affected by entering the com-
mand sequences.
RESET: A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high impedance
state. If the RESET pin makes a high to low transition during a program or erase operation, the
operation may not be successfully completed and the operation will have to be repeated after
a high level is applied to the RESET pin. When a high level is reasserted on the RESET pin,
the device returns to the read or standby mode, depending upon the state of the control inputs.
By applying a 12V
grammed even if the boot block lockout feature has been enabled (see Boot Block
Programming Lockout Override section). The RESET feature is not available on the
AT49BV001AN(T).
ERASURE: Before a byte can be reprogrammed, the main memory blocks or parameter
blocks which contains the byte must be erased. The erased state of the memory bits is a logi-
cal “1”. The entire device can be erased at one time by using a 6-byte software code. The
software chip erase code consists of 6-byte load commands to specific address locations with
a specific data pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device will internally time the erase opera-
tion so that no external clocks are required. The maximum time needed to erase the whole
chip is t
not be erased.
CHIP ERASE: If the boot block lockout has been enabled, the Chip Erase function will erase
Parameter Block 1, Parameter Block 2, Main Memory Block 1 - 2, but not the boot block. If the
Boot Block Lockout has not been enabled, the Chip Erase function will erase the entire chip.
After the full chip erase the device will return back to read mode. Any command during chip
erase will be ignored.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into sectors
that can be individually erased. There are two 8K-byte parameter block sections and two main
memory blocks. The 8K-byte parameter block sections and the two main memory blocks can
be independently erased and reprogrammed. The Sector Erase command is a six bus cycle
operation. The sector address is latched on the falling WE edge of the sixth cycle while the
30H data input command is latched at the rising edge of WE. The sector erase starts after the
rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will auto-
matically time to completion.
EC
. If the boot block lockout feature has been enabled, the data in the boot sector will
0.5V input signal to the RESET pin, the boot block array can be repro-
AT49BV001A(N)(T)
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