LH28F004SU-LC Sharp Electrionic Components, LH28F004SU-LC Datasheet - Page 3

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LH28F004SU-LC

Manufacturer Part Number
LH28F004SU-LC
Description
4M (512K bb 8) Flash Memory
Manufacturer
Sharp Electrionic Components
Datasheet
4M (512K × 8) Flash Memory
PIN DESCRIPTION
DQ
SYMBOL
A
A
RY
14
0
GND
0
V
V
WE
CE
RP
OE
NC
- A
- A
- DQ
PP
CC
»
/ BY
»
»
»
13
18
»
7
INPUT
INPUT
INPUT/OUTPUT
INPUT
INPUT
INPUT
INPUT
OPEN DRAIN
OUTPUT
SUPPLY
SUPPLY
SUPPLY
TYPE
WORD-SELECT ADDRESSES: Select a word within one 16K block. These
addresses are latched during Data Writes.
BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are
latched during Data Writes, Erase and Lock-Block operations.
DATA INPUT/OUTPUT: Inputs data and commands during CUI write cycles.
Outputs array, buffer, identifier or status data in the appropriate Read mode.
Floated when the chip is de-selected or the outputs are disabled.
CHIP ENABLE INPUT: Activate the device’s control logic, input buffers, decoders
and sense amplifiers. CE
RESET/POWER-DOWN: With RP
aborted and device is put into the deep power down mode. When the power is turned
on, RP
the power transition has occurred, or the power on/off, RP
order to protect data from noise. When returning from Deep Power-Down, a recovery
time of 620 ns is required to allow these circuits to power-up. When RP
any current or pending WSM operation(s) are terminated, and the device is reset. All
Status registers return to ready (with all status flags cleared). After returning, the
device is in read array mode.
OUTPUT ENABLE: Gates device data through the output buffers when low. The
outputs float to tri-state off when OE
WRITE ENABLE: Controls access to the CUI, Data Queue Registers and Address
Queue Latches. WE is active low, and latches both address and data (command or
array) on its rising edge.
READY/BUSY: Indicates status of the internal WSM. When low, it indicates that the
WSM is busy performing an operation. When the WSM is ready for new operation or
Erase is Suspended, or the device is in deep power-down mode RY
ERASE/WRITE POWER SUPPLY (3.0 V ±0.3 V): For erasing memory array blocks
or writing words/bytes into the flash array.
DEVICE POWER SUPPL Y (3.0 V ±0.3 V): Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating.
NO CONNECT: No internal connection to die, lead may be driven or left floating
»
pin is turned to low in order to return the device to default configuration. When
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must be low to select the device.
NAME AND FUNCTION
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low, the device is reset, any current operation is
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is high.
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is required to stay low in
LH28F004SU-LC
»
/ BY
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pin is floated.
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goes low,
3

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