HCS11MS Intersil Corporation, HCS11MS Datasheet

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HCS11MS

Manufacturer Part Number
HCS11MS
Description
Radiation Hardened Triple 3-Input AND Gate
Manufacturer
Intersil Corporation
Datasheet
November 1994
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K or 1 Mega-RAD(Si)
• Dose Rate Upset >10
• Cosmic Ray Upset Immunity < 2 x 10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS11MS is a Radiation Hardened Triple 3-
Input AND Gate. A high on all inputs forces the output to a
High state.
The HCS11MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS11MS is supplied in a 14 lead Weld Seal Ceramic
flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line
Package (D suffix).
Truth Table
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NOTE: L = Logic Level Low, H = Logic level High
An
H
H
H
H
L
L
L
L
INPUTS
Bn
H
H
H
H
L
L
L
L
10
RAD(Si)/s 20ns Pulse
5 A at VOL, VOH
Cn
H
H
H
H
L
L
L
L
o
C to +125
-9
OUTPUTS
Errors/Gate Day
Yn
H
o
L
L
L
L
L
L
L
C
7-135
Pinouts
Functional Diagram
(13, 5, 11)
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
(2, 4, 10)
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
(1, 3, 9)
GND
An
A1
B1
A2
B2
C2
Y2
Bn
Cn
HCS11MS
14 PIN CERAMIC DUAL-IN-LINE
14 PIN CERAMIC FLAT PACK
GND
A1
B1
A2
B2
C2
Y2
1
2
3
4
5
6
7
Triple 3-Input AND Gate
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
14
13
12
11
10
9
8
14
13
12
10
11
9
8
VCC
C1
Y1
C3
B3
A3
Y3
File Number
(12, 6, 8)
VCC
C1
Y1
C3
B3
A3
Y3
Yn
3048

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HCS11MS Summary of contents

Page 1

... The HCS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS11MS is supplied lead Weld Seal Ceramic flatpack (K suffi Weld Seal Ceramic Dual-In-Line Package (D suffix). Truth Table ...

Page 2

... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Specifications HCS11MS Reliability Information Thermal Impedance . . . . . . . . . . . . . . . . ...

Page 3

... VIL = 0.12(VCC RAD, IOH = -50 A Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND Noise Immunity FN VCC = 4.5V, VIH = 0.70(VCC), Functional Test VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC RAD (Note 3) Specifications HCS11MS GROUP (NOTES SUB- CONDITIONS GROUPS TEMPERATURE 9 10, 11 +125 9 10, 11 ...

Page 4

... CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note 1) Specifications HCS11MS 200K RAD LIMITS (NOTES 1, 2) TEMP- CONDITIONS ERATURE MIN o + +25 C 0.5V is recognized as a logic “ ...

Page 5

... OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 Specifications HCS11MS 1/2 VCC = 3V 0.5V VCC = 10, 11, 13 for static burn-in. 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS GROUND 10, 11, 13 Load Circuit ...

Page 6

... Thickness: 13k 2.6k DIE ATTACH: Material: Silver Epoxy WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 m x 100 mils Metallization Mask Layout B1 (2) A2 (3) B2 (4) C2 (5) HCS11MS HCS11MS A1 VCC C1 (1) (14) (13) (6) (7) (8) Y2 GND Y3 7-140 (12) Y1 (11) C3 (10) B3 (9) A3 ...

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