HCS32D Intersil Corporation, HCS32D Datasheet - Page 3

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HCS32D

Manufacturer Part Number
HCS32D
Description
Radiation Hardened Quad 2-Input OR Gate
Manufacturer
Intersil Corporation
Datasheet
NOTES:
NOTE:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500 , CL = 50pF, Input tr = tf = 3ns, VIL = GND, VIH = VCC.
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
Input to Output
Data to Output
Capacitance Power
Dissipation
Input Capacitance
Output Transition
Time
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
PARAMETER
PARAMETER
PARAMETER
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
SYMBOL
SYMBOL
TPHL
TPLH
TTHL
TTLH
CPD
CIN
SYMBOL
VOH
VOL
ICC
IOH
IOL
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = 4.5V
VCC = 4.5V
VCC = 5.0V, f = 1MHz
VCC = 5.0V, f = 1MHz
VCC = 4.5V
VCC = 4.5V and 5.5V,
VCC = 4.5V and 5.5V,
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VIH = 0.70(VCC), VIL = 0.30(VCC),
IOL = 50 A
VIH = 0.70(VCC), VIL = 0.30(VCC),
IOH = -50 A
CONDITIONS
CONDITIONS
(NOTES 1, 2)
Specifications HCS32MS
CONDITIONS
(NOTES 1, 2)
75
GROUPS
GROUP
A SUB-
NOTES
10, 11
10, 11
9
9
1
1
1
1
1
1
TEMPERATURE
TEMPERATURE
+125
+125
+125
TEMPERATURE
+125
+125
+25
+25
+25
+25
+25
o
o
o
C, -55
C, -55
C, -55
+25
+25
+25
+25
+25
o
o
o
o
o
o
o
C
C
C
C
C
C
C
o
o
o
o
o
o
o
o
C
C
C
C
C
C
C
C
VCC
MIN
MIN
MIN
-4.0
4.0
-0.1
2
2
2
2
Spec Number
-
-
-
-
-
-
200K RAD
-
-
LIMITS
LIMITS
LIMITS
MAX
MAX
MAX
0.2
0.1
18
20
20
22
11
10
10
15
22
6
-
-
-
UNITS
UNITS
UNITS
518768
mA
mA
mA
ns
ns
ns
ns
pF
pF
pF
pF
ns
ns
V
V

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