HCS21D Intersil Corporation, HCS21D Datasheet

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HCS21D

Manufacturer Part Number
HCS21D
Description
Radiation Hardened Dual 4-Input AND Gate
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS21MS is a Radiation Hardened Dual Input AND
Gate. A high on all inputs forces the output to a High state.
The HCS21MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of radia-
tion hardened, high-speed, CMOS/SOS Logic Family.
The HCS21MS is supplied in a 14 lead Ceramic flatpack (K suffix)
or a SBDIP Package (D suffix).
Ordering Information
HCS21DMSR
HCS21KMSR
HCS21D/
Sample
HCS21K/
Sample
HCS21HMSR
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
o
o
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
LEVEL
C to +125
RAD (Si)/s
o
-9
C
14 Lead SBDIP
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
2
/mg
Errors/Bit-Day
PACKAGE
53
Pinouts
Functional Diagram
NOTE: L = Logic Level Low, H = Logic level High, X = Don’t
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
(FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C
GND
NC
A1
B1
C1
D1
Y1
An
Bn (2, 10)
Cn (4, 12)
Dn (5, 13)
H
L
X
X
X
An (1, 9)
Care
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
HCS21MS
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
Bn
H
X
X
X
L
GND
INPUTS
NC
A1
B1
C1
D1
Y1
1
2
3
4
5
6
7
Dual 4-Input AND Gate
TRUTH TABLE
HX
1
2
3
4
5
6
7
Cn
X
X
X
L
TOP VIEW
TOP VIEW
Radiation Hardened
Dn
X
X
X
H
L
Spec Number
14
13
12
11
10
9
8
File Number
14
13
12
11
10
9
8
VCC
D2
C2
NC
B2
A2
Y2
OUTPUTS
Yn
H
L
L
L
L
Yn (6, 8)
518762
3052.1
VCC
D2
C2
NC
B2
A2
Y2

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HCS21D Summary of contents

Page 1

... HCS21DMSR - +125 C Intersil Class S Equivalent o o HCS21KMSR - +125 C Intersil Class S Equivalent o HCS21D/ +25 C Sample Sample o HCS21K/ +25 C Sample Sample o HCS21HMSR +25 C Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Y TPHL VCC = 4.5V TPLH VCC = 4.5V Input to YN TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND ...

Page 4

TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B ...

Page 5

TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note 10, 12, 13 STATIC BURN-IN II TEST CONNECTIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.20mm x 2.24mm METALLIZATION: Type: AlSil Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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