HCS132D Intersil Corporation, HCS132D Datasheet

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HCS132D

Manufacturer Part Number
HCS132D
Description
Radiation Hardened Quad 2-Input NAND Schmitt Trigger
Manufacturer
Intersil Corporation
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Cosmic Ray Upset Immunity < 2 x 10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS132MS is a Radiation Hardened Quad 2-Input
NAND Schmitt Trigger inputs. A high on both inputs forces the
output to a Low state.
The HCS132MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS132MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS132DMSR
HCS132KMSR
HCS132D/
Sample
HCS132K/
Sample
HCS132HMSR
(Typ)
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
o
o
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
C to +125
LEVEL
RAD (Si)/s
-9
Errors/Gate Day (Typ
o
-9
C
2
14 Lead SBDIP
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
/mg
Errors/Bit-Day
PACKAGE
133
Quad 2-Input NAND Schmitt Trigger
Pinouts
NOTE: L = Logic Level Low, H = Logic level High
Functional Diagram
(2, 5, 10, 13)
(1, 4, 9, 12)
GND
nO
HCS132MS
nA
A1
B1
A2
B2
Y1
Y2
An
H
H
L
L
FLATPACK PACKAGE (FLATPACK)
14 LEAD CERAMIC DUAL-IN-LINE
14 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
INPUTS
MIL-STD-1835 CDFP3-F14
A1
B1
Y1
A2
B2
Y2
MIL-STD-1835 CDIP2-T14
1
2
3
4
5
6
7
TRUTH TABLE
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
Bn
H
H
L
L
Spec Number
14
13
12
11
10
9
8
File Number
14
13
12
11
10
9
8
VCC
B4
A4
Y4
B3
A3
Y3
OUTPUTS
Yn
(3, 6, 8, 11)
H
H
H
L
nY
518750
3061.1
VCC
B4
A4
Y4
B3
A3
Y3

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HCS132D Summary of contents

Page 1

... HCS132DMSR - +125 C Intersil Class S Equivalent o o HCS132KMSR - +125 C Intersil Class S Equivalent o HCS132D/ +25 C Sample Sample o HCS132K/ +25 C Sample Sample o HCS132HMSR +25 C Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Output TPLH VCC = 4.5V TPHL VCC = 4.5V Input Switch Points Vt+ VCC = 4.5V Vt- VCC = 4.5V VH VCC = 4.5V NOTES: 1. All voltages referenced to ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50 A Output Voltage High VOH VCC = 4.5V and 5.5V, VIH ...

Page 5

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.29 x 2.29mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

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