HCS241D Intersil Corporation, HCS241D Datasheet

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HCS241D

Manufacturer Part Number
HCS241D
Description
Radiation Hardened Inverting Octal Three-State Buffer/Line Driver
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Compatibility Levels Ii
Description
The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.
The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).
Ordering Information
HCS241DMSR
HCS241KMSR
HCS241D/Sample
HCS241K/Sample
HCS241HMSR
Bit-Day (Typ)
- VIL = 30% VCC Max
- VIH = 70% VCC Min
PART NUMBER
10
RAD (Si)/Sec. 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
RAD (Si)/s
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
C
C
C
o
C
2
/mg
-9
o
o
C
C
Errors/
302
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
GND
BO4
BO3
BO2
BO1
Octal Three-State Buffer/Line Driver
AI1
AI2
AI3
AI4
AE
SCREENING LEVEL
HCS241MS
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
Radiation Hardened Inverting
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
BO4
BO3
BO2
BO1
AI1
AI2
AI3
AI4
AE
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
20
19
18
17
16
15
14
13
12
11
20
19
18
17
16
15
14
13
12
11
Spec Number
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
File Number
PACKAGE
518838
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
3122.1

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HCS241D Summary of contents

Page 1

... SBDIP package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCS241DMSR HCS241KMSR HCS241D/Sample HCS241K/Sample HCS241HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS241MS Octal Three-State Buffer/Line Driver ...

Page 2

Functional Diagram AO1 AI1 INPUTS AE AIn High Voltage Level L = Low Voltage Level X = Immaterial Z = High Impedance HCS241MS AO2 AO3 AO4 BO1 BO2 16 ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPLH1 VCC = 4.5V, VIH = 4.5V, VIL = 0V Propagation Delay TPHL1 VCC = 4.5V, VIH = 4.5V, VIL = 0V Propagation Delay TPZL1 VCC = 4.5V, VIH = ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Supply Current ICC VIN = 5.5V, VIN = VCC or GND Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 Output Current (Source) IOH ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing in ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 8

Propagation Delay Timing Diagram and Load Circuit VIH INPUT VS VSS TPLH VOH VS OUTPUT VOL Three-State High Timing Diagram and Load Circuit VIH INPUT VS VSS TPZH VOH VT OUTPUT VOZ Three-State Low Timing Diagram and Load Circuit VIH ...

Page 9

Die Characteristics DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness:13k 2.6k WORST CASE CURRENT DENSITY < 2 A/cm BOND PAD SIZE: 100 ...

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