2SK3586 Fuji Electric, 2SK3586 Datasheet - Page 3

• Manufacturer Part Number: 2SK3586
• Description: N CHANNEL SILICON POWER MOSFET
• Manufacturer: Fuji Electric

2SK3586-01
100
0.1
10
60
50
40
30
20
10
14
12
10
1
0
0.00
8
6
4
2
0
-50
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Gate Charge Characteristics
Typical Forward Characteristics of Reverse Diode
VGS=f(Qg):ID=50A, Tch=25°C
0.25
-25
0.50
20
0
0.75
25
Vcc= 50V
VSD [V]
max.
Qg [nC]
Tch [ C]
1.00
40
50
typ.
1.25
75
1.50
100
60
1.75
125
2.00
150
80
10
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
-1
-2
1
0
10
3
2
1
0
10
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
-50
t=f(ID):Vcc=48V, VGS=10V, RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
-1
Typical Switching Characteristics vs. ID
-1
-25
tf
0
10
10
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
Tch [ C]
50
td(off)
td(on)
min.
max.
75
10
10
1
1
100
125
A
Ciss
Coss
Crss
tr
150
10
10
2
2
3