BS62LV256 Brilliance Semiconductor, BS62LV256 Datasheet

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BS62LV256

Manufacturer Part Number
BS62LV256
Description
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet

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R0201-BS62LV256
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
FEATURES
PRODUCT FAMILY
Vcc = 3.0V
Vcc = 5.0V
-70
BS62LV256SC
BS62LV256TC
BS62LV256PC
BS62LV256JC
BS62LV256DC
BS62LV256SI
BS62LV256TI
BS62LV256PI
BS62LV256JI
BS62LV256DI
VCC
PRODUCT
A11
A13
A14
A12
WE
OE
A9
A8
A7
A6
A5
A4
A3
FAMILY
BSI
70ns (Max.) at Vcc=3.0V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
GND
DQ0
DQ1
DQ2
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
0.01uA (Typ.) CMOS standby current
C-grade : 20mA (Max.) operating current
C-grade : 35mA (Max.) operating current
I- grade : 25mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.4uA (Typ.) CMOS standby current
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV256TC
BS62LV256TI
BS62LV256SC
BS62LV256SI
BS62LV256PC
BS62LV256PI
BS62LV256JC
BS62LV256JI
-40
TEMPERATURE
0
OPERATING
O
O
C to +70
Very Low Power/Voltage CMOS SRAM
32K X 8 bit
C to +85
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
O
O
C
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
C
. reserves the right to modify document contents without notice.
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
2.4V ~ 5.5V
2.4V ~ 5.5V
RANGE
Vcc
SPEED
(ns)
Vcc=
3.0V
70
70
The BS62LV256 is a high performance, very low power CMOS
Static Random Access Memory organized as 32,768 words by 8 bits
and operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.01uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by active LOW chip
enable (CE), active LOW output enable (OE) and three-state
output drivers.
The BS62LV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV256
8mmx13.4mm TSOP (normal type).
1
28pin 330mil Plastic SOP, 300mil Plastic SOJ, 600mil Plastic DIP and
BLOCK DIAGRAM
DESCRIPTION
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A13
A11
Vdd
Gnd
WE
CE
OE
A5
A6
A7
A8
A9
1uA
2uA
Vcc=
5.0V
Address
STANDBY
(I
Buffer
Input
CCSB1
8
Control
8
POWER DISSIPATION
, Max)
is available in the DICE form, JEDEC standard
0.2uA
0.4uA
18
Vcc=
3.0V
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
35mA
40mA
Vcc=
5.0V
Operating
(I
8
512
CC
8
, Max)
20mA
25mA
BS62LV256
A4
Vcc=
3.0V
Address Input Buffer
Column Decoder
A3 A2 A1 A0 A10
Memory Array
Sense Amp
Write Driver
Column I/O
512 x 512
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
SOP-28
TSOP-28
PDIP-28
SOJ-28
DICE
512
64
12
TYPE
Revision 2.2
April 2001
PKG

Related parts for BS62LV256

BS62LV256 Summary of contents

Page 1

... A3 Brilliance Semiconductor Inc R0201-BS62LV256 DESCRIPTION The BS62LV256 is a high performance, very low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of ...

Page 2

... (1) RATING UNITS with -0 Vcc+0.5 -40 to +125 -60 to +150 C 1 This parameter is guaranteed and not tested. 2 BS62LV256 Function I/O OPERATION Vcc CURRENT High Z High Z D OUT D IN OPERATING RANGE AMBIENT RANGE TEMPERATURE O O Commercial + Industrial ...

Page 3

... TEST CONDITIONS CE Vcc - 0.2V V Vcc - 0. Vcc -0.2V V Vcc - 0. See Retention Waveform ( CE Controlled ) Data Retention Mode ≥ V 1.5V DR Vcc t CDR ≥ CE Vcc - 0. BS62LV256 MIN. TYP. MAX. (1) Vcc=3.0V -0.5 -- 0.8 Vcc=5.0V 2.0 Vcc=3.0V -- Vcc+0.2 2.2 Vcc=5. Vcc=3. 0.4 Vcc=5.0V Vcc=3.0V 2.4 -- Vcc=5. Vcc=3 ...

Page 4

... Output Disable to Output Address Change OH 4 BS62LV256 KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS MUST BE STEADY MAY CHANGE FROM MAY CHANGE FROM DON T CAR E: ANY CHANG E PERMITTED DOES NOT APPLY o C and Vcc=3.0V) BS62LV256 MIN. TYP. MAX ...

Page 5

... C The parameter is guaranteed but not 100% tested. R0201-BS62LV256 ACS (5) t CLZ OLZ t ACS (5) t CLZ . IL = 5pF as shown in Figure 1B BS62LV256 t OH (5) t CHZ t OH (5) t OHZ (1,5) t CHZ Revision 2.2 April 2001 ...

Page 6

... Write Recovery Time (CE , WE) Write to Output in High Z Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End ot Write to Output Active t WC (11 ( (2) AS (4,10) t OHZ 6 BS62LV256 BS62LV256 UNIT MIN. TYP. MAX ...

Page 7

... The parameter is guaranteed but not 100% tested. 11 measured from the later of CE going low to the end of write. CW R0201-BS62LV256 t WC ( (4,10) t WHZ ). IL 500mV from steady state with C = 5pF as shown in Figure 1B BS62LV256 (8,9) DH (8) Revision 2.2 April 2001 ...

Page 8

... BSI ORDERING INFORMATION BS62LV256 PACKAGE DIMENSIONS PACKAGE DIMENSIONS SOP - 28 R0201-BS62LV256 0.020 0.005X45 b WITH PLATING BASE METAL 8 BS62LV256 SPEED 70: 70ns GRADE + - + PACKAGE J: SOJ S: SOP P: PDIP T: TSOP (8mm x 13.4mm) D: DICE θ Revision 2.2 April 2001 ...

Page 9

... Seating Plane 15 12 (2X) "A" SEATING PLANE 15 12 (2X "A" DATAIL VIEW b WITH PLATING BASE METAL SECTION A-A 9 BS62LV256 UNIT INCH MM SYMBOL A 0.0433 0.004 1.10 0.10 A1 0.0045 0.0026 0.115 0.065 A2 0.039 0.002 1.00 0.05 b 0.009 0.002 0.22 0.05 b1 0.008 0.001 0.20 0.03 c 0.004 ~ 0.008 0.10 ~ 0.21 c1 0.004 ~ 0.006 ...

Page 10

... BSI PACKAGE DIMENSIONS (continued) SOJ - 28 R0201-BS62LV256 10 BS62LV256 Revision 2.2 April 2001 ...

Page 11

... BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release R0201-BS62LV256 Date Apr. 15, 2001 11 BS62LV256 Note Revision 2.2 April 2001 ...

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