BS62UV1024DC Brilliance Semiconductor, BS62UV1024DC Datasheet

BS62UV1024DC

Manufacturer Part Number

BS62UV1024DC

Description

Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit

Manufacturer

Brilliance Semiconductor

Datasheet

1.BS62UV1024DC.pdf (11 pages)

Current page: 1 of 11
Download datasheet (391Kb)

R0201-BS62UV1024

• Ultra low operation voltage : 1.8V ~ 3.6V

• Ultra low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PIN CONFIGURATIONS

Brilliance Semiconductor Inc

PRODUCT FAMILY

FEATURES

Vcc = 2.0V

Vcc = 3.0V

-15

BS62UV1024SC

BS62UV1024TC

BS62UV1024JC

BS62UV1024STC

BS62UV1024PC

BS62UV1024DC

BS62UV1024SI

BS62UV1024TI

BS62UV1024JI

BS62UV1024STI

BS62UV1024PI

BS62UV1024DI

PRODUCT

FAMILY

VCC

CE2

A11

A13

A15

A16

A14

A12

BSI

150ns (Max.) at Vcc = 2.0V

GND

DQ0

DQ1

DQ2

A16

A14

A12

C-grade : 10mA (Max.) operating current

C-grade : 20mA (Max.) operating current

I- grade : 15mA (Max.) operating current

0.01uA (Typ.) CMOS standby current

I- grade : 25mA (Max.) operating current

0.02uA (Typ.) CMOS standby current

BS62UV1024SC

BS62UV1024SI

BS62UV1024PC

BS62UV1024PI

BS62UV1024JC

BS62UV1024JI

BS62UV1024TC

BS62UV1024STC

BS62UV1024TI

BS62UV1024STI

-40

TEMPERATURE

OPERATING

Ultra Low Power/Voltage CMOS SRAM

128K X 8 bit

C to +70

C to +85

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

. reserves the right to modify document contents without notice.

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

1.8V ~ 3.6V

RANGE

Vcc

SPEED

(ns)

Vcc=

150

2.0V

The BS62UV1024 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 131,072 words by 8 bits

and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.01uA and maximum access time of 150ns in 2V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62UV1024 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62UV1024 is available in the JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP 300mil Plastic SOJ and

8mmx20mm TSOP.

BLOCK DIAGRAM

DESCRIPTION

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE2

A12

A14

A16

A15

A13

A11

CE1

Vdd

Gnd

1.0uA

1.5uA

Vcc=

3.0V

STANDBY

Address

CCSB1

Buffer

Input

POWER DISSIPATION

Control

, Max)

0.3uA

1uA

Vcc=

2.0V

Output

Buffer

Data

Input

Data

Decoder

Row

20mA

25mA

Vcc=

3.0V

Operating

, Max)

1024

10mA

15mA

BS62UV1024

Vcc=

2.0V

Address Input Buffer

Column Decoder

Memory Array

Sense Amp

Write Driver

Column I/O

A3 A2 A1 A0 A10

1024 x 1024

SOP -32

TSOP -32

SOJ -32

STSOP - 32

PDIP -32

DICE

SOP -32

TSOP -32

SOJ - 32

STSOP -32

PDIP- 32

DICE

PKG TYPE

1024

128

Revision 2.2

April 2001

Related parts for BS62UV1024DC

BS62UV1024DC Summary of contents

Page 1

... Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE2, CE1, and OE options PRODUCT FAMILY PRODUCT OPERATING FAMILY TEMPERATURE BS62UV1024SC BS62UV1024TC BS62UV1024JC +70 BS62UV1024STC BS62UV1024PC BS62UV1024DC BS62UV1024SI BS62UV1024TI BS62UV1024JI O - +85 BS62UV1024STI BS62UV1024PI BS62UV1024DI PIN CONFIGURATIONS A16 2 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A16 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1333 2V OUTPUT 100PF INCLUDING Ω 2000 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT 800 OUTPUT ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX t t E1LWH t t AVWL t t AVWH t t WLWH t t WHAX t t E2LAX t t WLOZ t t DVWH t t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

BSI ORDERING INFORMATION BS62UV1024 PACKAGE DIMENSIONS SOP -32 R0201-BS62UV1024 WITH PLATING BASE METAL SECTION A-A 8 BS62UV1024 SPEED 15: 150ns GRADE + -40 C ...

Page 9

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 TSOP - 32 R0201-BS62UV1024 9 BS62UV1024 Revision 2.2 April 2001 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) SOJ - 32 PDIP - 32 R0201-BS62UV1024 10 BS62UV1024 Revision 2.2 April 2001 ...

Page 11

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release R0201-BS62UV1024 Date Apr. 15, 2001 11 BS62UV1024 Note Revision 2.2 April 2001 ...

Related keywords

BS62UV1024DC datasheet
BS62UV1024DC data sheet
BS62UV1024DC pdf datasheet
BS62UV1024DC component
BS62UV1024DC part
BS62UV1024DC distributor
BS62UV1024DC RoHS
BS62UV1024DC datasheet download