BS62UV2001 Brilliance Semiconductor, BS62UV2001 Datasheet

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BS62UV2001

Manufacturer Part Number
BS62UV2001
Description
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
R0201-BS62UV2001
• Wide Vcc operation voltage : 1.8V ~ 3.6V
• Ultra low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2, CE1, and OE options
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc
FEATURES
VCC
CE2
A11
A13
A15
A17
A16
A14
A12
Vcc = 2.0V
Vcc = 3.0V
WE
BS62UV2001TC
BS62UV2001STC
BS62UV2001SC
BS62UV2001TI
BS62UV2001STI
BS62UV2001SI
-70
-10
A9
A8
A7
A6
A5
A4
PRODUCT
GND
DQ0
DQ1
DQ2
A17
A16
A14
A12
FAMILY
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A7
A6
A5
A4
A3
A2
A1
A0
BSI
100ns(Max.) at Vcc = 2.0V
70ns(Max.) at Vcc = 2.0V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
BS62UV2001SC
BS62UV2001SI
BS62UV2001TC
BS62UV2001STC
BS62UV2001TI
BS62UV2001STI
0.08uA (Typ.) CMOS standby current
C-grade : 15mA (Max.) operating current
C-grade : 20mA (Max.) operating current
I- grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
TEMPERATURE
-40
+0
OPERATING
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
O
O
Ultra Low Power/Voltage CMOS SRAM
256K X 8 bit
C to +70
C to +85
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
O
O
C
C
. reserves the right to modify document contents without notice.
1.8~3.6V
1.8~3.6V
RANGE
Vcc
70 / 100
70 / 100
Vcc=2V
SPEED
(ns)
The BS62UV2001 is a high performance, Ultra low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates from a wide range of 1.8V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.1uA and maximum access time of 70ns in 3.0V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62UV2001 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62UV2001 is available in the JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.
1
BLOCK DIAGRAM
DESCRIPTION
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
CE2
A15
A16
A14
A12
Vdd
Gnd
A13
A17
WE
OE
OE
A7
A6
A5
A4
Vcc=3V
0.7uA
1.5uA
(I
Address
CCSB1
Buffer
STANDBY
Input
8
Control
8
POWER DISSIPATION
, Max)
Vcc=2V Vcc=3V Vcc=2V
20
0.5uA
1uA
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
20mA
25mA
Operating
(I
8
CC
1024
8
BS62UV2001
, Max)
15mA
20mA
A11
A9
Address Input Buffer
Column Decoder
Memory Array
A8 A3 A2 A1
Sense Amp
Write Driver
Column I/O
1024 x 2048
TSOP
STSOP
SOP
TSOP
STSOP
SOP
PKG TYPE
2048
256
16
Revision 2.4
April 2002
A0
-
-
-
32
-
A10
32
32
32
-
-
32
32

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BS62UV2001 Summary of contents

Page 1

... Brilliance Semiconductor Inc R0201-BS62UV2001 DESCRIPTION The BS62UV2001 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of ...

Page 2

... UNITS -0 Vcc+0.5 Commercial O -40 to +125 C O -60 to +150 C 1.0 W CAPACITANCE 20 mA SYMBOL This parameter is guaranteed and not tested. 2 BS62UV2001 Function I/O OPERATION Vcc CURRENT High Z High Z D OUT D IN AMBIENT RANGE TEMPERATURE + Industrial - +85 ...

Page 3

... Vcc - 0. See Retention Waveform ( CE1 Controlled ) Data Retention Mode ≥ V 1.5V DR Vcc t CDR ≥ CE1 Vcc - 0. CE2 Controlled ) Data Retention Mode V 1.5V DR Vcc t CDR CE2 0. BS62UV2001 MIN. TYP. MAX. (1) -0.5 -- Vcc=2.0V -0.5 -- Vcc=3.0V 1.4 -- Vcc+0.2 Vcc=2.0V 2.0 -- Vcc+0.2 Vcc=3. Vcc=2. Vcc=3.0V 1.6 -- Vcc=2 ...

Page 4

... Output Disable to Output Address Change 4 BS62UV2001 KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS MUST BE STEADY MAY CHANGE FROM MAY CHANGE FROM DON T CAR E: ANY CHANG E PERMITTED DOES NOT APPLY o C, Vcc = 2.0V ) BS62UV2001-70 BS62UV2001-10 MIN. TYP. MAX. MIN. TYP. MAX 100 -- -- 70 -- (CE1 (CE2 ...

Page 5

... The parameter is guaranteed but not 100% tested. R0201-BS62UV2001 ACS1 t ACS2 (5) t CLZ OLZ t ACS1 (5) t CLZ1 t ACS2 (5) t CLZ2 and CE2 IH. = 5pF as shown in Figure 1B BS62UV2001 CHZ1, CHZ2 t OH (5) t OHZ (1,5) t CHZ1 (2,5) t CHZ2 Revision 2.4 April 2002 ...

Page 6

... Data to Write Time Overlap Data Hold from Write Time Output Disable to Output in High Z End of Write to Output Active t WC (11 (5) (5) (11 (2) AS (4,10) t OHZ 6 BS62UV2001 BS62UV2001-70 BS62UV2001-10 MIN. TYP. MAX. MIN. TYP. MAX 100 -- 100 -- 100 -- ...

Page 7

... CE1 going low or CE2 going high to the end of write. CW R0201-BS62UV2001 (5) ( (4,10) t WHZ ). IL ± 500mV from steady state with BS62UV2001 (11) CW (11 WR2 ( (8, 5pF as shown in Figure 1B. The (8) Revision 2.4 April 2002 ...

Page 8

... BSI ORDERING INFORMATION BS62UV2001 PACKAGE DIMENSIONS STSOP - 32 R0201-BS62UV2001 BS62UV2001 SPEED 70: 70ns 10: 100ns GRADE + - + PACKAGE T: TSOP (8mm x 20mm) ST: Small TSOP (8mm x 13.4mm) S: SOP Revision 2.4 April 2002 ...

Page 9

... BSI PACKAGE DIMENSIONS (continued) TSOP - 32 SOP -32 R0201-BS62UV2001 b WITH PLATING BASE METAL SECTION A-A 9 BS62UV2001 Revision 2.4 April 2002 ...

Page 10

... BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release 2.3 Modify Standby Current (Typ. and Max.) 2.4 Modify some AC parameters R0201-BS62UV2001 Date Apr. 15, 2001 Jun. 29, 2001 April,11,2002 10 BS62UV2001 Note Revision 2.4 April 2002 ...

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