BS62UV4000EC Brilliance Semiconductor, BS62UV4000EC Datasheet

BS62UV4000EC

Manufacturer Part Number

BS62UV4000EC

Description

Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit

Manufacturer

Brilliance Semiconductor

Datasheet

1.BS62UV4000EC.pdf (11 pages)

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R0201-BS62UV4000

• Ultra low operation voltage : 1.8V ~ 3.6V

• Ultra low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

PIN CONFIGURATIONS

Brilliance Semiconductor Inc

FEATURES

PRODUCT FAMILY

Vcc = 2.0V

Vcc = 3.0V

A11

A13

A17

A15

A18

A16

A14

A12

-70

-10

BS62UV4000TC

BS62UV4000STC

BS62UV4000SC

BS62UV4000EC

BS62UV4000PC

BS62UV4000TI

BS62UV4000STI

BS62UV4000SI

BS62UV4000EI

BS62UV4000PI

PRODUCT

FAMILY

GND

DQ0

DQ1

DQ2

A18

A16

A14

A12

BSI

100ns (Max.) at Vcc = 2.0V

70ns (Max.) at Vcc = 2.0V

C-grade: 15mA (Max.) operating current

C-grade: 20mA (Max.) operating current

BS62UV4000TC

BS62UV4000STC

BS62UV4000TI

BS62UV4000STI

0.2uA (Typ.) CMOS standby current

I -grade: 25mA (Max.) operating current

0.25uA (Typ.) CMOS standby current

I -grade: 20mA (Max.) operating current

BS62UV4000SC

BS62UV4000SI

BS62UV4000EC

BS62UV4000EI

BS62UV4000PC

BS62UV4000PI

TEMPERATURE

OPERATING

Ultra Low Power/Voltage CMOS SRAM

512K X 8 bit

C to +70

C to +85

VCC

A15

A17

A13

A11

A10

DQ7

DQ6

DQ5

DQ4

DQ3

A10

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

. reserves the right to modify document contents without notice.

1.8V ~ 3.6V

RANGE

Vcc

Vcc = 2.0V

70 / 100

SPEED

( ns )

The BS62UV4000 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 524,288 words by 8 bits

and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.2uA and maximum access time of 70ns in 2.0V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE), and active LOW output enable (OE) and three-state

output drivers.

The BS62UV4000 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62UV4000 is available in the JEDEC standard 32 pin SOP

, TSOP, TSOP II and STSOP

BLOCK DIAGRAM

DESCRIPTION

A13

A17

A15

A18

A16

A14

A12

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Vdd

GND

Vcc = 2.0V

1uA

2uA

( I

Address

STANDBY

Buffer

CCSB1

Input

Control

POWER DISSIPATION

, Max )

Vcc =3.0V

1.5uA

3uA

Output

Buffer

Data

Input

Data

Decoder

Row

Vcc = 2.0V

15mA

20mA

Operating

( I

2048

, Max )

BS62UV4000

Vcc =3.0V

A11 A9 A8 A3 A2 A1 A0 A10

20mA

25mA

Address Input Buffer

Column Decoder

Memory Array

2048 X 2048

Sense Amp

Write Driver

Column I/O

TSOP

STSOP

PDIP

TSOP

STSOP

PDIP

TSOP2

SOP

TSOP2

SOP

2048

256

Revision 2.4

April 2002

TYPE

PKG

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BS62UV4000EC Summary of contents

Page 1

... A18 1 VCC 32 A16 2 A15 31 A14 3 A17 30 A12 A13 BS62UV4000SC 8 A11 25 BS62UV4000SI BS62UV4000EC A2 10 A10 23 BS62UV4000EI BS62UV4000PC A0 12 DQ7 21 BS62UV4000PI DQ0 13 DQ6 20 DQ1 14 DQ5 19 DQ2 15 DQ4 18 GND 16 DQ3 A11 ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A18 Address Input CE Chip Enable Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc GND TRUTH TABLE MODE WE Not selected X Output Disabled H Read H Write L ABSOLUTE ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (2) Voltage Guaranteed Input High V IH (2) Voltage I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage Output High ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1333 2V OUTPUT 100PF INCLUDING Ω 2000 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT 800 OUTPUT ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE D OUT (1,4) READ CYCLE3 ADDRESS OUT NOTES high in read Cycle. 2. Device is continuously selected when CE ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals ...

Page 8

BSI ORDERING INFORMATION BS62UV4000 PACKAGE DIMENSIONS SOP -32 R0201-BS62UV4000 WITH PLATING BASE METAL SECTION A-A 8 BS62UV4000 SPEED 70: 70ns 10: 100ns GRADE + ...

Page 9

BSI TSOP2 - 32 TSOP - 32 R0201-BS62UV4000 9 BS62UV4000 Revision 2.4 April 2002 ...

Page 10

BSI PACKAGE DIMENSIONS (continued) STSOP - 32 PDIP - 32 R0201-BS62UV4000 10 BS62UV4000 Revision 2.4 April 2002 ...

Page 11

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release 2.3 Modify Standby Current (Typ. and Max.) 2.4 Modify some AC parameters R0201-BS62UV4000 Date Apr. 15, 2001 Jun. 29, 2001 April,10,2002 11 BS62UV4000 Note Revision 2.4 April 2002 ...

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