AM28F020A Advanced Micro Devices, AM28F020A Datasheet - Page 31

• Manufacturer Part Number: AM28F020A
• Description: 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
• Manufacturer: Advanced Micro Devices

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25 C, 12 V V
2. Maximum time specified is lower than worst case. Worst case is derived from the Embedded Algorithm internal counter which
3. Typical worst case = 84 µs. DQ5 = “1” only after a byte takes longer than 96 ms to program.
LATCHUP CHARACTERISTICS
PIN CAPACITANCE
Note: Sampled, not 100% tested. Test conditions T
DATA RETENTION
Chip Erase Time
Chip Programming Time
Write/Erase Cycles
Byte Programming Time
Parameter
Input Voltage with respect to V
Input Voltage with respect to V
Current
Includes all pins except V
Parameter
Minimum Pattern Data Retention Time
Parameter
allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is
significantly less than the actual device limit.
Symbol
C
C
C
OUT
IN2
IN
Parameter
PP
Input Capacitance
Output Capacitance
V
.
PP
Input Capacitance
Parameter Description
CC
. Test conditions: V
100,000
SS
SS
Min
on all pins except I/O pins (Including A9 and V
on all pins I/O pins
(Note 1)
Typ
14
1
4
CC
Limits
A
= 5.0 V, one pin at a time.
= 25°C, f = 1.0 MHz.
(Note 2)
(Note 3)
Max
Am28F020A
10
25
96
V
V
V
IN
OUT
PP
= 0
= 0
= 0
Cycles
Test Conditions
Unit
sec
sec
ms
µs
Test Conditions
150 C
125 C
Excludes 00h programming prior to erasure
Excludes system-level overhead
PP
)
Comments
–100 mA
–1.0 V
–1.0 V
Typ
Min
Min
8
8
8
10
20
Max
10
12
12
V
CC
+100 mA
13.5 V
Years
Years
Max
Unit
+ 1.0 V
Unit
pF
pF
pF
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