AM29F017B Advanced Micro Devices, AM29F017B Datasheet
AM29F017B
Related parts for AM29F017B
AM29F017B Summary of contents
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... PRELIMINARY Am29F017B 16 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Optimized for memory card applications — Backwards-compatible with the Am29F016C 5.0 V 10%, single power supply operation — Minimizes system level power requirements Manufactured on 0.35 µm process technology High performance — Access times as fast Low power consumption — ...
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... GENERAL DESCRIPTION The Am29F017B Mbit, 5.0 volt-only Flash mem- ory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F017B is offered in a 48-pin TSOP package. This device is designed to be programmed in-system with the standard system 5.0 volt V supply. A 12.0 volt V is not required for pro- ...
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... A0–A20 - Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F017B Am29F017B -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ7 Input/Output Buffers Data STB ...
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... DQ3 15 DQ2 16 DQ1 17 DQ0 48-Pin Standard TSOP 48-Pin Reverse TSOP Am29F017B A20 WE# 43 OE# 42 RY/BY# 41 DQ7 40 DQ6 39 DQ5 38 DQ4 ...
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... RY/BY# = Ready/Busy Output V = +5.0 V single power supply CC (see Product Selector Guide for device speed ratings and voltage supply tolerances Device Ground Pin Not Connected Internally LOGIC SYMBOL 21 A0–A20 CE# OE# WE# RESET# Am29F017B 8 DQ0–DQ7 RY/BY# 21195B-4 5 ...
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... Am29F017B 16 Megabit ( 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 5.0 V Read, Program, and Erase Valid Combinations Am29F017B-70 Am29F017B-90 EC, EI, EE, FC, FI, FE Am29F017B-120 Am29F017B-150 OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0° ...
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... The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29F017B Device Bus Operations Operation Read Write CMOS Standby ...
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... CC3 Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29F017B , the device enters IL SS (during Embedded Algorithms). The (not during Embedded Algo- READY after the RE- RH ...
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... Am29F017B Address Range 000000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh ...
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... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector ad- Table 3. Am29F017B Autoselect Codes (High Voltage Method) Description CE# OE# WE# A20-A18 A17-A10 Manufacturer ID ...
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... CE# and WE# must be a logical zero while OE logical one. Power-Up Write Inhibit If WE device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29F017B power-up and CC , the device does not ac- LKO The system must provide the is greater than V ...
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... When the Embedded Program algorithm is complete, the device then returns to reading array data and ad- dresses are no longer latched. The system can deter- mine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for in- formation on these status bits. Am29F017B on address bit A9. ID ...
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... The interrupts can be re-enabled after the last Sector Erase command is written. If the time between additional sector erase commands can be assumed to be less than 50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend during the Am29F017B 13 ...
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... The system must write the Erase Resume command (address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the de- vice has resumed erasing. Am29F017B ...
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... System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Embedded Erase algorithm in progress 21195B-7 Am29F017B 15 ...
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... Table 5. Am29F017B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Manufacturer ID 4 Autoselect Device ID 4 (Note 7) Sector Group Protect 4 Verify (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F017B Yes No Yes Yes No ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F017B ...
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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F017B (Note 1) No Yes Yes (Notes Yes ...
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... See “DQ5: Exceeded Timing Limits” for more information Table 6. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F017B DQ2 DQ3 (Note 1) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...
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... Operating ranges define those limits between which the functionality of the device is guaranteed +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative Overshoot to –2 0.5 V. During + 2 +2 +0.5 V 2.0 V Figure 7. Maximum Positive Overshoot Am29F017B 21195B-10 Waveform 21195B-11 Waveform 21 ...
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... RESET 0 Max RESET Min –2.5 mA Min –100 µ Min Am29F017B Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0. ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement 21195B-12 reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F017B All speed options Unit 1 TTL gate L 100 0.45–2.4 V ...
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... Max Read Min Toggle and Min Data# Polling Max Max Min Max t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F017B Speed Options -70 -90 -120 -150 70 90 120 150 70 90 120 150 70 90 120 150 ...
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... Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F017B All Speed Options Unit 20 µs 500 ns 500 21195B-14 25 ...
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... See the “Erase and Programming Performance” section for more information Parameter Description Min Min Min Min Min Min Min Min Min Min Min Typ Typ Max Min Min Am29F017B Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...
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... Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F017B Read Status Data (last two cycles WHWH1 D Status OUT t RB 21195B-15 27 ...
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... SA = Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase t BUSY Am29F017B Read Status Data WHWH2 In Complete Progress t RB 21195B-16 ...
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... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F017B VA High Z Valid Data True High Z True Valid Data 21195B- Valid Status Valid Data (stops toggling) 21195B-18 29 ...
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... Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F017B Erase Resume Erase Erase Complete Read 21195B-19 All Speed Options 500 VIDR ...
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... See the “Erase and Programming Performance” section for more information Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Am29F017B Speed Options -70 -90 -120 -150 70 90 120 150 ...
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... PA for program SA for sector erase XXX for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F017B PA DQ7# D OUT = Array Data. OUT 21195B-21 ...
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... V, 1,000,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150 C 125 C Am29F017B Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 1 – ...
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... MAX 0.25MM (0.0098") BSC TSR048—48-Pin Reverse Thin Small Outline Package (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC 18.30 18.50 19.80 20. 0.50 0. 18.30 18.50 19.80 20. 0.50 0.70 Am29F017B 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 16-038-TS48-2 0.08 TS 048 0.20 DT95 8-8-96 lv 0.10 0.21 0.95 1.05 11.90 12.10 0.50 BSC 0.05 0.15 SEATING PLANE 16-038-TS48 TSR048 0.08 DT95 0.20 8-8-96 lv 0.10 ...
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... REVISION SUMMARY FOR AM29F017B Revision B Global Made formatting and layout consistent with other data sheets. Used updated common tables and diagrams. The online version has slightly modified formatting. Revision B+1 Reset Command Deleted paragraph referring to RESET# waveforms. AC Characteristics—Read-only Operations Deleted note referring to output driver disable time. ...