K9F1208D0B Samsung semiconductor, K9F1208D0B Datasheet - Page 22
K9F1208D0B
Manufacturer Part Number
K9F1208D0B
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208D0B.pdf
(45 pages)
- Current page: 22 of 45
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K9F1208R0B
K9F1208B0B
K9F1208U0B
Input Data Latch Cycle
Serial access Cycle after Read
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
I/Ox
t
ALS
NOTES : Transition is measured ±200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
t
WC
This parameter is sampled and not 100% tested.
REA
(CLE=L, WE=H, ALE=L)
t
DH
t
WH
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
22
t
DH
Dout
t
RHZ*
t
WP
t
DIN n
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
t
RHZ*
t
OH
CHZ*
OH
Preliminary
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