M464S1654ETS Samsung semiconductor, M464S1654ETS Datasheet - Page 11

• Manufacturer Part Number: M464S1654ETS
• Description: SDRAM Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

(Recommended operating condition unless otherwise noted, T
128MB, 256MB, 512MB Unbuffered SODIMM
M464S3254ETS (32M x 64, 256MB Module)
DC CHARACTERISTICS
Notes :
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE ≤ 0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
A
Test Condition
(max), t
(max), t
= 0 to 70°C)
CC
CC
IH
= 10ns
= 10ns
/V
IL
IH
IH
CC
CC
IL
IL
=V
(min), t
(min), t
(max), t
(max), t
DDQ
=∞
=∞
/V
CC
CC
CC
CC
SSQ
= 10ns
= 10ns
=∞
=∞
)
C
L
Version
460
160
200
200
620
820
7A
16
16
80
50
50
24
12
Rev. 1.5 May 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
Note
1
1
2