M464S1654ETS Samsung semiconductor, M464S1654ETS Datasheet - Page 12

• Manufacturer Part Number: M464S1654ETS
• Description: SDRAM Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

M464S6453EN0 (64M x 64, 512MB Module)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
128MB, 256MB, 512MB Unbuffered SODIMM
Notes :
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE ≤ 0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
A
Test Condition
(max), t
(max), t
= 0 to 70°C)
CC
CC
IH
= 10ns
= 10ns
/V
IL
IH
IH
CC
CC
IL
IL
=V
(min), t
(min), t
(max), t
(max), t
DDQ
=∞
=∞
/V
CC
CC
CC
CC
SSQ
= 10ns
= 10ns
=∞
=∞
)
C
L
Version
1,000
1,000
840
320
160
100
100
400
400
7A
32
32
48
48
Rev. 1.5 May 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
Note
1
1
2