K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 23
K9F1208Q0B
Manufacturer Part Number
K9F1208Q0B
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0B.pdf
(45 pages)
- Current page: 23 of 45
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K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
ALE
* Input Data Latch Cycle
CLE
CE
WE
CE
RE
R/B
I/Ox
I/Ox
* Serial access Cycle after Read
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
RR
t
WP
t
DS
DIN 0
t
t
WC
This parameter is sampled and not 100% tested.
REA
t
DH
t
WH
(CLE=L, WE=H, ALE=L)
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
22
t
DH
Dout
t
RHZ*
t
WP
t
DIN n
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
t
RHZ*
OH
CHZ*
t
OH
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