K9F1208Q0B Samsung semiconductor, K9F1208Q0B Datasheet - Page 31
K9F1208Q0B
Manufacturer Part Number
K9F1208Q0B
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
1.K9F1208Q0B.pdf
(45 pages)
- Current page: 31 of 45
- Download datasheet (808Kb)
Copy-Back Program Operation
CLE
CE
WE
ALE
RE
I/O
R/B
K9F1208U0A-VCB0,VIB0,FCB0,FIB0
K9F1208Q0A-DCB0,DIB0,HCB0,HIB0
K9F1208U0A-YCB0,YIB0,PCB0,PIB0
K9F1208U0A-DCB0,DIB0,HCB0,HIB0
X
00h
t
WC
Column
Address
A
0
~A
7
A
9
~A
16
Page(Row)
Address
A
17
~A
24
A
25
t
WB
K9F1216Q0A-DCB0,DIB0,HCB0,HIB0
K9F1216U0A-YCB0,YIB0,PCB0,PIB0
K9F1216U0A-DCB0,DIB0,HCB0,HIB0
t
R
Busy
Copy-Back Data
Input Command
8Ah
CE must be held low during tR
On K9F1208U0A-Y,P or K9F1208U0A-V,F
30
Column
Address
A
0
~A
7
A
9
~A
16
Page(Row)
A
Address
17
~A
24
A
25
10h
FLASH MEMORY
t
WB
t
I/O
I/O
PROG
Busy
0
0
=0 Successful Program
=1 Error in Program
Read Status
Command
70h
I/O
0
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