M464S6554BTS Samsung semiconductor, M464S6554BTS Datasheet - Page 8

• Manufacturer Part Number: M464S6554BTS
• Description: SDRAM Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
Note :
CAPACITANCE
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
256MB, 512MB Unbuffered SODIMM
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
0
(V
~ A
Parameter
DD
12
IN
= 3.3V, T
, BA0 ~ BA1)
≤ V
DDQ
A
.
Symbol
= 23°C, f = 1MHz, V
V
V
V
V
V
I
OH
DD
OL
LI
IH
IL
V
V
Symbol
DD
IN
Min
-0.3
T
3.0
2.0
2.4
-10
, V
I
, V
P
-
STG
OS
REF
D
OUT
DDQ
SS
Symbol
C
C
C
C
C
C
C
= 1.4V ± 200 mV)
= 0V, T
OUT
IN1
IN2
IN3
IN4
IN5
IN6
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
M464S3354BTS
Min
15
15
15
15
15
10
10
1.0 * # of component
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Max
Value
+0.3
25
25
25
21
25
12
12
50
M464S6454BTS
Min
Rev. 1.2 March 2004
25
25
15
15
15
10
10
Unit
uA
V
V
V
V
V
Max
45
45
25
21
25
12
12
I
I
OH
SDRAM
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF