M464S6554BTS Samsung semiconductor, M464S6554BTS Datasheet - Page 9

• Manufacturer Part Number: M464S6554BTS
• Description: SDRAM Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

M464S3354BTS (32M x 64, 256MB Module)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
256MB, 512MB Unbuffered SODIMM
Notes :
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
N
P
P
Burst length = 1
t
I
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE ≤ 0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
A
Test Condition
(max), t
(max), t
= 0 to 70°C)
CC
CC
= 10ns
= 10ns
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
=∞
=∞
CC
CC
CC
CC
= 10ns
= 10ns
=∞
=∞
C
L
Version
Rev. 1.2 March 2004
400
120
100
520
800
7A
80
40
25
25
12
8
8
6
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
Note
1
1
2