M470T6554CZ0 Samsung semiconductor, M470T6554CZ0 Datasheet
M470T6554CZ0
Related parts for M470T6554CZ0
M470T6554CZ0 Summary of contents
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Unbuffered SODIMMs DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 DDR2 SDRAM Rev. 1.1 Mar. 2005 ...
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... Unbuffered SODIMMs DDR2 Unbuffered SODIMM Ordering Information Part Number Density M470T3354CZ0-C(L)D6/E6/D5/CC 256MB M470T6554CZ0-C(L)D6/E6/D5/CC 512MB M470T2953CZ0-C(L)D6/E6/D5/CC Note: “Z” of Part number stand for Lead-free products. Features • Performance range D6(DDR2-667) Speed@CL3 400 Speed@CL4 667 Speed@CL5 667 CL-tRCD-tRP 4-4-4 • JEDEC standard 1.8V ± 0.1V Power Supply • ...
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... DQS2 Note : Connect; NC, TEST(pin 163)is for bus analysis tool and is not connected on normal memory modules. SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice. Pin Description Pin Name Function CK0,CK1 Clock Inputs, positive line CK0,CK1 ...
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... DDR2 SDRAMs and is sent at the leading edge of the data In/Out DQS0~DQS7 window. DQS signals are complements, and timing is relative to the crosspoint of respective DQS and DQS If the module operated in single ended strobe mode, all DQS signals must be tied on the system board to VSS and DDR2 SDRAM mode registers programmed appropriately ...
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... DQ25 I/O 9 DQ26 I/O 10 DQ27 I/O 11 DQ28 I/O 12 DQ29 I/O 13 DQ30 I/O 14 DQ31 I/O 15 3Ω BA0 - BA1 A0 - A13 RAS CAS WE V SPD DD V REF 512MB, 64Mx64 Module M470T6554CZ0 CS CS DQS4 C O LDQS LDQS K D DQS4 LDM DM4 I I I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 ...
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... DM0 DQS1 DQS1 DM1 DQS2 DQS2 DM2 DQS3 DQS3 DM3 3Ω BA0 - BA1 A0 - A13 RAS CAS WE V SPD DD V REF 256MB, 32Mx64 Module M470T3354CZ0 CS DQS4 LDQS O C LDQS D K DQS4 LDM T E DM4 DQ0 I/O 0 DQ1 I DQ2 I/O 2 DQ3 I/O 3 DQ4 ...
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... DDR2 SDRAMs D0 - D15 RAS DDR2 SDRAMs D0 - D15 CAS DDR2 SDRAMs D0 - D15 WE DDR2 SDRAMs D0 - D15 V SPD Serial DDR2 SDRAMs D0 - D15 REF V DDR2 SDRAMs D0 - D15 DDR2 SDRAMs D0 - D15, SPD SS 1GB, 128Mx64 Module M470T2953CZ0 1 CS0 CS DQS4 O C DQS DQS D K DQS4 ...
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Unbuffered SODIMMs Absolute Maximum DC Ratings Symbol Parameter VDD Voltage on VDD pin relative to Vss VDDQ Voltage on VDDQ pin relative to Vss VDDL Voltage on VDDL pin relative to Vss V V Voltage on any ...
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Unbuffered SODIMMs Operating Temperature Condition Symbol Parameter TOPER Operating Temperature 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard ...
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Unbuffered SODIMMs IDD Specification Parameters Definition (IDD values are for full operating range of Voltage and Temperature) Symbol Proposed Conditions IDD0 Operating one bank active-precharge current CK(IDD RC(IDD), t ...
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... Unbuffered SODIMMs Operating Current Table(1-1) M470T6554CZ0 : 64Mx64 512MB Module 667@CL=4 Symbol CD6 LD6 IDD0 tbd tbd IDD1 tbd tbd IDD2P tbd tbd IDD2Q tbd tbd IDD2N tbd tbd IDD3P-F tbd tbd IDD3P-S tbd tbd IDD3N tbd tbd IDD4W ...
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... V =1.8V DDQ A Symbol Min M470T6554CZ0 CCK - CI - CIO(400/533) - CIO(667) - DDR2 SDRAM 400@CL=3 Unit CCC LCC 960 880 mA 1,000 mA 160 80 mA 480 mA 560 mA 480 400 ...
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Unbuffered SODIMMs Electrical Characteristics & AC Timing for DDR2-667/533/400 (0 °C < T < 95 °C; V OPER DDQ Refresh Parameters by Device Density Parameter Refresh to active/Refresh command time Average periodic refresh interval Speed Bins and ...
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Unbuffered SODIMMs Symbol Parameter DQ and DM input tDS(base) setup time Control & Address tIPW input pulse width for each input DQ and DM input tDIPW pulse width for each input Data-out high- tHZ impedance time from ...
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Unbuffered SODIMMs Symbol Parameter Active to active tRRD command period for 2KB page size products tFAW Four Activate Window for 1KB page size products tFAW Four Activate Window for 2KB page size products CAS to CAS command ...
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Unbuffered SODIMMs Symbol Parameter ODT turn-off (Power- t tAC(mi AOFPD Down mode) ODT to power down tANPD entry latency ODT power down exit tAXPD latency OCD drive mode tOIT output delay Minimum time clocks tDelay tIS+tCK remains ...
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... Unbuffered SODIMMs Physical Dimensions 11.40 16. FRONT SIDE 4.20 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC 32Mbx16 based 64Mx64 Module(2 Rank) M470T6554CZ0 67. 199 47.40 63.00 200 67.60 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4.20 DDR2 SDRAM 2.00 DETAIL b 0 ...
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... Unbuffered SODIMMs Physical Dimensions 11.40 16. FRONT SIDE 4.20 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 32M x16 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51163QC 32Mbx16 based 32Mx64 Module(1 Rank) M470T3354CZ0 67. 199 47.40 63.00 200 67.60 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4.20 DDR2 SDRAM 2 ...
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... Unbuffered SODIMMs Physical Dimensions 11.40 16. FRONT SIDE 4.20 2.70 ± 0.10 1.50 ± 0.10 1.0 ± 0.05 4.00 ± 0.10 The used device is 64M x8 DDR2 SDRAM, FBGA. DDR2 SDRAM Part NO : K4T51083QC 64Mbx8 based 128Mx64 Module(2 Ranks) M470T2953CZ0 67.60 mm SPD b 199 47.40 63.00 200 67.60 mm DETAIL a BACK SIDE 4.00 ± 0.10 1.0 ± 0.05 1.80 ± 0.10 2.40 ± 0.10 4 ...
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Unbuffered SODIMMs Revision History Revision 1.0 (Mar. 2005) - Initial Release Revision 1.1 (Mar. 2005) - Changed IDD0/IDD3N/IDD3P current values. - Added Lowpower current values. DDR2 SDRAM Rev. 1.1 Mar. 2005 ...