K6F2008V2E-LF55 Samsung semiconductor, K6F2008V2E-LF55 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/5/578/samsung_semiconductor_sml.jpg)
K6F2008V2E-LF55
Manufacturer Part Number
K6F2008V2E-LF55
Description
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet
1.K6F2008V2E-LF55.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K6F2008V2E-LF55
Manufacturer:
SAM
Quantity:
2 000
Company:
Part Number:
K6F2008V2E-LF55
Manufacturer:
SAMSUNG
Quantity:
2 148
K6F2008V2E Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
CS
OE
Data out
t
HZ
levels.
interconnection.
1
2
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
OH
(WE=V
(Address Controlled
(Max.) is less than
t
AA
t
t
CO2
CO1
IH
t
)
OE
t
AA
6
t
,
RC
t
t
CS1=OE=V
RC
LZ
(Min.) both for a given device and from device to device
IL
Data Valid
, WE=V
IH
)
Data Valid
t
t
OHZ
OH
t
HZ(1,2)
CMOS SRAM
Revision 1.1
May 2003