K6X4016C3F-B Samsung semiconductor, K6X4016C3F-B Datasheet - Page 2
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K6X4016C3F-B
Manufacturer Part Number
K6X4016C3F-B
Description
256Kx16 bit Low Power full CMOS Static RAM
Manufacturer
Samsung semiconductor
Datasheet
1.K6X4016C3F-B.pdf
(9 pages)
FEATURES
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
256Kx16 bit Low Power full CMOS Static RAM
K6X4016C3F Family
Product Family Operating Temperature Vcc Range
I/O
Process Technology: Full CMOS
Organization: 256Kx16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL compatible
Package Type: 44-TSOP2-400F
A
K6X4016C3F-B
K6X4016C3F-F
K6X4016C3F-Q
Name
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
1
WE
OE
CS
~A
~I/O
17
16
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
A17
A16
A15
A14
A13
Vcc
Vss
WE
CS
A4
A3
A2
A1
A0
Function
Automotive (-40~125
Commercial(
Industrial (-40~85
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
44-TSOP2
Forward
0~70
Name
Vcc
Vss
UB
NC
LB
C)
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
C)
C)
Lower Byte (I/O
Upper Byte(I/O
Power
Ground
No Connection
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
A12
4.5~5.5V
Function
9~16
1~8
55
)
Speed
)
1)
/70ns
2
FUNCTIONAL BLOCK DIAGRAM
I/O
WE
OE
UB
LB
CS
9
GENERAL DESCRIPTION
advanced full CMOS process technology. The families sup-
port various operating temperature range and small pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
~I/O
The K6X4016C3F families are fabricated by SAMSUNG s
I/O
(I
16
Standby
SB1
Row
Addresses
1
~I/O
Control
logic
20
30
Power Dissipation
, Max)
8
A
A
(I
Operating
Clk gen.
CC2
30 mA
Data
cont
Data
cont
Data
cont
, Max)
Row
select
CMOS SRAM
Column Addresses
Precharge circuit.
Memory array
Column select
44-TSOP2-400F
I/O Circuit
PKG Type
September 2003
Revision 1.0
Vcc
Vss