M2764A-3F1 STMicroelectronics, M2764A-3F1 Datasheet - Page 3
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M2764A-3F1
Manufacturer Part Number
M2764A-3F1
Description
NMOS 64K 8K x 8 UV EPROM
Manufacturer
STMicroelectronics
Datasheet
1.M2764A-3F1.pdf
(10 pages)
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Table 4. Electronic Signature
Table 3. Operating Modes
Note: X = V
DEVICE OPERATION (cont’d)
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while G should be made
a common connection to all devices in the array
and connected to the READ line from the system
control bus.
This ensures that all deselected memory devices
are in their low power standby mode and that the
output pins are only active when data is desired
from a particular memory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, I
are of interest to the system designer: the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of the transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommended that a 1 F ceramic
capacitor be used on every device between V
and V
Manufacturer’s Code
Device Code
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
SS
Identifier
. This should be a high frequency capacitor
IH
Mode
or V
IL
, V
ID
= 12V
CC
, has three segments that
V
A0
V
0.5%.
IH
IL
V
V
V
V
V
V
V
E
IH
IH
Q7
IL
IL
IL
IL
IL
0
0
Q6
0
0
V
V
V
V
V
G
X
X
IH
IH
IL
IL
IL
CC
Q5
1
0
V
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7 F bulk electrolytic capacitor should be used
between V
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M2764A are in the “1" state.
Data is introduced by selectively programming ”0s"
into the desired bit locations. Although only “0s” will
be programmed, both “1s” and “0s” can be present
in the data word. The only way to change a “0" to
a ”1" is by ultraviolet light erasure.
The M2764A is in the programming mode when
V
The data to be programmed is applied, 8 bits in
parallel, to the data output pins. The levels required
for the address and data inputs are TTL.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M2764A EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
continually monitored to determine when it has
Q4
IL
PP
0
0
V
V
V
V
Pulse
P
X
X
IH
IH
IH
IH
input is at 12.5V and E and P are at TTL low.
Q3
0
1
CC
and V
V
A9
X
X
X
X
X
X
Q2
ID
0
0
SS
for every eight devices. The
Q1
0
0
V
V
V
V
V
V
V
V
CC
CC
CC
CC
PP
PP
PP
PP
Q0
0
0
Codes Out
Data Out
Data Out
Hex Data
Q0 - Q7
Data In
M2764A
Hi-Z
Hi-Z
Hi-Z
20h
08h
3/10