K7A801809B Samsung semiconductor, K7A801809B Datasheet - Page 8

• Manufacturer Part Number: K7A801809B
• Description: 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
• Manufacturer: Samsung semiconductor

K7A803601M
K7A801801M
(V
DC ELECTRICAL CHARACTERISTICS
Notes : 1. Reference AC Operating Conditions and Characteristics for input and timing.
TEST CONDITIONS
Input Leakage Current(except ZZ)
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
Input Pulse Level(for 3.3V I/O)
Input Pulse Level(for 2.5V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
Input and Output Timing Reference Levels for 3.3V I/O
Input and Output Timing Reference Levels for 2.5V I/O
Output Load
DD
=3.3V+0.165V/-0.165V,V
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
PARAMETER
V
SS-
DDQ
1.0V
V
SS
=3.3V+0.165/-0.165V or V
PARAMETER
IH
V
SYMBOL
=V
IH
I
I
V
V
V
V
V
V
I
I
I
V
V
DDQ
SB1
SB2
I
CC
OL
SB
OH
OH
IL
OL
OL
IH
IH
IL
IL
+0.3V
V
Output Disabled, V
Device Selected, I
ZZ V
Device deselected, I
ZZ V
V
Device deselected, I
f =0, All Inputs=fixed (V
Device deselected, I
f=Max, All Inputs V
I
I
I
I
OL
OH
OL
OH
DD
DD
=8.0mA
=1.0mA
=-4.0mA
=-1.0mA
-0.2V
=Max ; V
IL ,
IL
, f=Max, All Inputs 0.2V or
(V
256Kx36 & 512Kx18 Synchronous SRAM
Cycle Time
DD
20% t
DD
TEST CONDITIONS
=3.3V+0.165V/-0.165V, T
IN
=3.3V+0.165V/-0.165V,V
=V
- 8 -
CYC
SS
OUT
OUT
IL
OUT
(MIN)
OUT
OUT
to V
or V
=0mA,
t
=V
CYC
DD
=0mA, ZZ V
=0mA,
=0mA, ZZ 0.2V,
DD
SS
-0.2V or 0.2V)
Min
IH
to V
DDQ
DD
-0.2V,
-14
-11
-10
-14
-11
-10
DDQ
A
=0 C to +70 C)
=2.5V+0.4V/-0.125V, T
-0.3*
-0.3*
MIN
2.4
2.0
2.0
1.7
-2
-2
-
-
-
-
-
-
-
-
-
-
V
V
See Fig. 1
DD
DD
0 to 3.0V
0 to 2.5V
VALUE
1.0V/ns
1.0V/ns
V
MAX
400
380
350
130
130
120
0.4
0.4
0.8
0.7
1.5V
+2
+2
30
30
+0.5**
+0.5**
DDQ
-
-
/2
A
UNIT
=0to70 C)
mA
mA
mA
mA
V
V
V
V
V
V
V
V
A
A
May 1999
NOTES
Rev 3.0
1,2
3
3