GS74108J ETC [List of Unclassifed Manufacturers], GS74108J Datasheet - Page 4

• Manufacturer Part Number: GS74108J
• Description: 512K x 8 4Mb Asynchronous SRAM
• Manufacturer: ETC [List of Unclassifed Manufacturers]

Recommended Operating Conditions
Note:
1.
2.
Capacitance
Notes:
1.
2.
DC I/O Pin Characteristics
Rev: 1.06 7/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output High Voltage
Output Low Voltage
Output Leakage
Input Leakage
Input overshoot voltage should be less than V
Input undershoot voltage should be greater than -2V and not exceed 20ns.
Tested at T
These parameters are sampled and are not 100% tested
Supply Voltage for -10/12/15
Parameter
Output Capacitance
Input Capacitance
Current
Current
Ambient Temperature,
Ambient Temperature,
Supply Voltage for -8
Parameter
Commercial Range
Input High Voltage
Input Low Voltage
Industrial Range
Parameter
A
=25°C, f=1MHz
Symbol
V
V
I
I
LO
OH
IL
OL
Symbol
C
C
OUT
IN
Symbol
V
V
V
T
V
T
DD
DD
Ac
IH
A
IL
I
Test Conditions
DD
V
Test Condition
Output High Z
V
+2V and not exceed 20ns.
OUT
I
I
IN
LO
OH
= 0 to V
V
= + 4mA
= 0 to V
= - 4mA
V
OUT
IN
3.135
Min
=0V
-0.3
-40
3.0
2.0
=0V
0
4/12
DD
DD
Typ
Max
3.3
3.3
-
-
-
-
5
7
-1uA
-1uA
Min
2.4
V
Max
DD
Unit
3.6
3.6
0.8
70
85
pF
pF
+0.3
Max
0.4V
1uA
1uA
Unit
o
o
V
V
V
V
C
C
© 1999, Giga Semiconductor, Inc.
GS74108TP/J