AS7C252MPFD18A-133TQC ALSC [Alliance Semiconductor Corporation], AS7C252MPFD18A-133TQC Datasheet - Page 8

• Manufacturer Part Number: AS7C252MPFD18A-133TQC
• Description: 2.5V 2M x 18 pipelined burst synchronous SRAM
• Manufacturer: ALSC [Alliance Semiconductor Corporation]

Absolute maximum ratings
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
may affect reliability.
Recommended operating conditions
DC electrical characteristics
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
**
I
1 I
V
DD
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
Short circuit output current
Storage temperature
Temperature under bias
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Input leakage current
Output leakage current
Input high (logic 1) voltage
Input low (logic 0) voltage
Output high voltage
Output low voltage
Operating power supply current
Standby power supply current
V
CC
IH
2/11/05,
IL
max < VDD +1.5V for pulse width less than 0.2 X t
given with no output loading. I
min = -1.5 for pulse width less than 0.2 X t
operating conditions and maximum limits
v.1.1
Parameter
Parameter
Parameter
†
Parameter
CC
increases with faster cycle times and greater output loading.
1
CYC
|I
|I
V
V
V
V
LI
LO
IH
IL
OH
OL
Sym
Sym
I
I
|
I
I
SB1
SB2
|
CC
SB
CYC
Alliance Semiconductor
V
OE ≥ V
Address and control pins
I/O pins
Address and control pins
I/O pins
I
I
OH
OL
DD
CE0 < V
All V
= 8 mA, V
= –4 mA, V
= Max, OV < V
Symbol
V
Deselected, f = f
IH
V
Vss
DDQ
IN
all V
DD
, V
Deselected, f = 0, ZZ < 0.2V,
≤ 0.2V or > V
IL
DD
I
, CE1 > V
V
all V
OUT
IN
DDQ
Symbol
DD
f = f
DDQ
= Max, OV < V
≤ 0.2V or ≥ V
I
T
V
V
T
OUT
, V
P
bias
= 0 mA, ZZ < V
IN
stg
Conditions
IN
IN
= 2.625V
d
Max
Conditions
IN
= 2.375V
DDQ
≤ V
Max
®
IH
< V
, ZZ < V
IL
DD
, ZZ ≥ V
, CE2 < V
DD
or ≥ V
– 0.2V, Deselected,
2.375
2.375
DD
Min
OUT
IL
0
DD
– 0.2V
IH
IL
IL
– 0.2V,
< V
Min
–0.3
–0.3
–0.3
–65
–65
, f = f
–
–
DDQ
Max
Nominal
,
2.5
2.5
0
V
V
-200
450
170
DDQ
AS7C252MPFD18A
90
80
DD
Max
+150
+135
-0.3
-0.3
+3.6
Min
1.8
1.7
1.7
20
1.7
-2
-2
–
+ 0.3
+ 0.3
**
**
*
*
-166
400
150
2.625
2.625
Max
90
80
0
V
V
DDQ
Max
DD
0.7
0.7
0.7
140
90
80
2
2
–
+0.3
-133
+0.3
350
8 of 18
Unit
mA
W
o
o
V
V
V
C
C
Unit
V
V
V
Unit
Unit
mA
mA
µA
µA
V
V
V
V
V
V