BS62LV2006DIG70 BSI [Brilliance Semiconductor], BS62LV2006DIG70 Datasheet
BS62LV2006DIG70
Manufacturer Part Number
BS62LV2006DIG70
Description
Very Low Power CMOS SRAM 256K X 8 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
1.BS62LV2006DIG70.pdf
(10 pages)
R0201-BS62LV2006
GND
DQ0
DQ1
DQ2
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
Wide V
Very low power consumption :
High speed access time :
Automatic power down when chip is deselected
Easy expansion with CE2, CE1 and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
FEATURES
POWER CONSUMPTION
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
V
V
-55
-70
BS62LV2006DC
BS62LV2006SC
BS62LV2006STC
BS62LV2006TC
BS62LV2006SI
BS62LV2006STI
BS62LV2006TI
CC
CC
PRODUCT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
= 3.0V
= 5.0V
FAMILY
CC
•
BS62LV2006SC
BS62LV2006SI
operation voltage : 2.4V ~ 5.5V
VCC
CE2
A13
A15
A17
A16
A14
A12
A11
WE
A9
A8
A7
A6
A5
A4
Operation current : 23mA (Max.) at 55ns
Standby current :
Operation current : 55mA (Max.) at 55ns
Standby current :
55ns (Max.) at V
70ns (Max.) at V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
TEMPERATURE
-40
OPERATING
+0
BS62LV2006TC
BS62LV2006TI
BS62LV2006STC
BS62LV2006STI
Commercial
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
O
Industrial
O
C to +70
C to +85
Pb-Free and Green package materials are compliant to RoHS
CC
CC
Very Low Power CMOS SRAM
256K X 8 bit
: 3.0~5.5V
: 2.7~5.5V
0.7/2uA (Max.) at 70/85
10mA (Max.) at 1MHz
6/20uA (Max.) at 70/85
O
O
2mA (Max.) at 1MHz
C
C
V
CC
6.0uA
20uA
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
=5.0V V
STANDBY
(I
CCSB1
OE
A10
CE1
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
reserves the right to change products and specifications without notice.
, Max)
0.7uA
2.0uA
CC
=3.0V
O
O
C
C
10mA
1MHz
9mA
1
POWER DISSIPATION
The BS62LV2006 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
current of 2/20uA at Vcc=3V/5V at 85
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2), and active LOW output
enable (OE) and three-state output drivers.
The BS62LV2006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV2006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 8mmx13.4mm STSOP, and 8mmx20mm TSOP
package.
V
10MHz
29mA
30mA
CC
DESCRIPTION
BLOCK DIAGRAM
=5V
GND
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
A12
A14
A16
A17
A15
A13
CE2
CE1
A11
WE
V
OE
A7
A8
A9
CC
53mA
55mA
f
Max.
Address
Buffer
Operating
Input
(I
Control
CC
, Max)
8
8
1.5mA
1MHz
2mA
10
Output
Buffer
Buffer
Input
Data
Data
Decoder
Row
V
10MHz
10mA
9mA
CC
=3V
O
8
BS62LV2006
C and maximum access time
8
1024
22mA
23mA
A6
f
Max.
A5
Address Input Buffer
Column Decoder
A10
Memory Array
1024 x 2048
Write Driver
Column I/O
Sense Amp
Revision
Oct.
A4 A3 A2 A1 A0
DICE
SOP-32
STSOP-32
TSOP-32
SOP-32
STSOP-32
TSOP-32
PKG TYPE
2048
256
8
2008
1.4
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