BS62LV2006DIG70 BSI [Brilliance Semiconductor], BS62LV2006DIG70 Datasheet - Page 6

• Manufacturer Part Number: BS62LV2006DIG70
• Description: Very Low Power CMOS SRAM 256K X 8 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BS62LV2006
AC ELECTRICAL CHARACTERISTICS (T
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
E1LWH
E2LAX
WLWH
WHAX
DVWH
WHDX
WHQX
AVWL
AVWH
WLQZ
GHQZ
AVAX
ADDRESS
OE
CE1
CE2
WE
D
D
OUT
IN
PARANETER
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WR1
WR2
WHZ
OHZ
WC
CW
DW
OW
(1)
AW
WP
DH
AS
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
DESCRIPTION
t
t
AS
OHZ
A
= -40
(4,10)
O
C to +85
(5)
(5)
6
(CE1, WE)
t
AW
(CE2)
O
C)
t
t
t
CW
CW
WP
t
WC
CYCLE TIME : 55ns
MIN.
(11)
(11)
(2)
55
55
55
30
25
--
--
5
0
0
0
0
(V
CC
= 3.0~5.5V)
TYP.
t
--
--
--
--
--
--
--
--
--
--
--
--
DW
MAX.
25
25
--
--
--
--
--
--
--
--
--
--
t
t
WR1
WR2
t
DH
CYCLE TIME : 70ns
MIN.
(3)
(3)
70
35
70
70
30
--
--
5
0
0
0
0
(V
BS62LV2006
CC
= 2.7~5.5V)
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
30
30
Revision
Oct.
--
--
--
--
--
--
--
--
--
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2008
1.4