BS62LV4008 BSI [Brilliance Semiconductor], BS62LV4008 Datasheet - Page 3

• Manufacturer Part Number: BS62LV4008
• Description: Very Low Power/Voltage CMOS SRAM 512K X 8 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BS62LV4008
1. Vcc = 1.5V, T
2. t
3. I
DATA RETENTION CHARACTERISTICS
LOW V
1. Typical characteristics are at T
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. I
PARAMETER
DC ELECTRICAL CHARACTERISTICS
Vcc
CE
SYMBOL
cc
RC
cc
DR
NAME
I
= Read Cycle Time
I
SB1_MAX.
V
t
CCDR
I
CCSB1
CDR
V
CCSB
V
t
V
I
_
V
I
DR
R
I
CC
LO
IL
OL
OH
MAX.
IH
IL
CC
(5)
BSI
(4)
is 0.8uA at T
DATA RETENTION WAVEFORM
is 5uA at Vcc=3.0V and T
A
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
= + 25
Operating Power Supply
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Current
Standby Current-CMOS
Standby Current-TTL
PARAMETER
O
PARAMETER
C
A
=70
(3)
(3)
O
C.
A
= 25
o
A
C.
=70
V
IH
o
t
C.
Vcc
CDR
Vcc = Max, V
Vcc = Max, CE = V
V
Vcc = Max, I
Vcc = Min, I
CE = V
CE ≧ Vcc-0.2V,
V
CE = V
F=Fmax
I/O
IN
CE ≧ Vcc - 0.2V
V
CE ≧ Vcc - 0.2V
V
See Retention Waveform
IN
IN
= 0V to Vcc
≧ Vcc - 0.2V or V
( TA = -40 to + 85
( TA = -40 to + 85
≧ Vcc - 0.2V or V
≧ Vcc - 0.2V or V
IH
IL
, I
, I
(2)
TEST CONDITIONS
( CE Controlled )
TEST CONDITIONS
DQ
5. Icc_
DQ
2. Fmax = 1/t
OH
= 0mA,
OL
= 0mA
IN
= -1.0mA
= 2.0mA
= 0V to Vcc
Data Retention Mode
3
CE
MAX.
IH
V
, or OE = V
≥
DR
is 29mA(@55ns) / 24mA(@70ns) at Vcc=3.0V and T
Vcc - 0.2V
IN
≥
Vcc = 3.0 V
IN
IN
o
RC
1.5V
≦ 0.2V
C )
o
≦ 0.2V
≦ 0.2V
.
C )
IH
,
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
Vcc = 3.0 V
70ns
55ns
MIN.
T
Vcc
1.5
RC
--
0
t
(2)
R
-0.5
2.0
2.4
V
MIN. TYP.
--
--
--
--
--
--
IH
TYP.
0.3
BS62LV4008
--
--
--
(1)
0.45
--
--
--
--
--
--
--
--
(1)
MAX.
1.3
MAX.
--
--
--
Vcc+0.3
0.5
30
0.8
0.4
25
10
--
1
1
Revision 1.1
Jan.
A
=0~70
UNITS
uA
ns
ns
UNITS
V
mA
mA
uA
uA
uA
2004
V
V
V
V
o
C.