BS62LV4008 BSI [Brilliance Semiconductor], BS62LV4008 Datasheet - Page 6
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BS62LV4008
Manufacturer Part Number
BS62LV4008
Description
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
1.BS62LV4008.pdf
(10 pages)
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R0201-BS62LV4008
WRITE CYCLE1
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
AC ELECTRICAL CHARACTERISTICS
PARAMETER
t
t
t
t
t
t
t
t
t
t
t
JEDEC
NAME
AVAX
E1LWH
AVW L
AVWH
WLWH
WHAX
WLOZ
DVWH
WHDX
GHOZ
WHQX
ADDRESS
OE
CE
WE
D
D
IN
OUT
BSI
(1)
PARAMETER
NAME
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End ot Write to Output Active
t
(4,10)
AS
t
OHZ
DESCRIPTION
( TA = -40 to + 85
(5)
t
AW
6
(CE , WE)
t
t
t
WC
CW
WP
(11)
o
C )
(2)
CYCLE TIME : 55ns
MIN.
55
55
55
30
25
0
0
--
0
--
5
t
(Vcc = 3.0~3.6V)
DW
TYP.
--
--
--
--
--
--
--
--
--
--
--
t
t
MAX.
WR
DH
(3)
25
25
--
--
--
--
--
--
--
--
--
BS62LV4008
CYCLE TIME : 70ns
MIN.
35
30
70
70
70
--
(Vcc = 2.7~3.6V)
0
0
0
--
5
TYP.
--
--
--
--
--
--
--
--
--
--
--
MAX.
30
30
--
--
--
--
--
--
--
--
--
Revision 1.1
Jan.
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2004