BS62LV4006ECG70 BSI [Brilliance Semiconductor], BS62LV4006ECG70 Datasheet - Page 12

• Manufacturer Part Number: BS62LV4006ECG70
• Description: Very Low Power CMOS SRAM 512K X 8 bit
• Manufacturer: BSI [Brilliance Semiconductor]

R0201-BS62LV4006
Revision History
Revision No.
1.2
1.3
1.4
1.5
History
To add Icc1 characteristic parameter
To improve Iccsb1 spec.
I-grade from 60uA to 20uA at 5.0V
C-grade from 30uA to 10uA at 5.0V
To Add 400 mil TSOP II package type
Change I-grade operation temperature range
- from –25
Typical value of standby current is replaced by
maximum value in Featues and Description
section
Remove “-: Normal” (Leaded) PKG Material in
ordering information
Remove BGA Package
O
C to –40
10uA to 4.0uA at 3.0V
5.0uA to 2.0uA at 3.0V
O
C
12
Draft Date
Jan. 13, 2006
March 20, 2006
May. 25, 2006
Oct. 31, 2008
BS62LV4006
Revision
Oct.
Remark
2008
1.5