BS62LV4006ECG70 BSI [Brilliance Semiconductor], BS62LV4006ECG70 Datasheet - Page 5
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BS62LV4006ECG70
Manufacturer Part Number
BS62LV4006ECG70
Description
Very Low Power CMOS SRAM 512K X 8 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
1.BS62LV4006ECG70.pdf
(12 pages)
Available stocks
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Part Number
Manufacturer
Quantity
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R0201-BS62LV4006
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
READ CYCLE 2
READ CYCLE 3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = V
3. Address valid prior to or coincident with CE transition low.
4. OE = V
5. Transition is measured ± 500mV from steady state with C
The parameter is guaranteed but not 100% tested.
ADDRESS
D
CE
D
ADDRESS
OE
CE
D
IL
OUT
OUT
.
OUT
(1,2,4)
(1,3,4)
(1, 4)
IL
.
t
CLZ
t
OH
(5)
t
t
CLZ
ACS
L
= 5pF.
(5)
t
AA
t
t
5
ACS
AA
t
OLZ
t
t
OE
t
RC
RC
t
t
CHZ
CHZ
t
OHZ
BS62LV4006
(1,5)
(5)
t
t
OH
OH
(5)
Revision
Oct.
2008
1.5