BS62LV8001DC55 BSI [Brilliance Semiconductor], BS62LV8001DC55 Datasheet
BS62LV8001DC55
Related parts for BS62LV8001DC55
BS62LV8001DC55 Summary of contents
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Very Low Power CMOS SRAM bit Pb-Free and Green package materials are compliant to RoHS n FEATURES Ÿ Wide V operation voltage : 2.4V ~ 5.5V CC Ÿ Very low power consumption : V = 3.0V Operation ...
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PIN DESCRIPTIONS Name A0-A19 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports TRUTH TABLE MODE CE1 H Not ...
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DC ELECTRICAL CHARACTERISTICS (T PARAMETER PARAMETER NAME V Power Supply CC V Input Low Voltage IL V Input High Voltage IH I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High ...
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LOW V DATA RETENTION WAVEFORM (2) (CE2 Controlled CE2 n AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level ...
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SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE 1 ADDRESS D OUT (1,3,4) READ CYCLE 2 CE1 CE2 D OUT (1, 4) READ CYCLE 3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. ...
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AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Write Cycle Time AVAX Chip Select to End of Write AVWL Address Set up Time AVWH Address ...
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WRITE CYCLE 2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...
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ORDERING INFORMATION BS62LV8001 X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in ...
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PACKAGE DIMENSIONS (continued) SIDE VIEW D 0.1 D1 3.375 VIEW A 48 mini-BGA (9mm x 12mm) R0201-BS62LV8001 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE NUMBER ...
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Revision History Revision No. History 2.2 Add Icc1 characteristic parameter Improve Iccsb1 spec. I-grade from 110uA to 50uA at 5.0V C-grade from 55uA to 25uA at 5.0V 2.3 Change I-grade operation temperature range - from –25 O Change Iccdr ...