6MBI 25S-120 Fuji Electric holdings CO.,Ltd, 6MBI 25S-120 Datasheet

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6MBI 25S-120

Manufacturer Part Number
6MBI 25S-120
Description
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
6MBI25S-120
IGBT MODULE ( S series)
1200V / 25A 6 in one-package
· Compact package
· P.C.board mount
· Low V
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector
current
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
Screw torque
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Item
Thermal resistance
*
1 :
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Electrical characteristics (Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Recommendable value : 2.5 to 3.5 N·m (M5)
Features
Applications
Maximum ratings and characteristics
CE
(sat)
Continuous
1ms
1ms
Tc=25°C
Tc=80°C
Tc=80°C
Tc=25°C
V
V
P
-I
T
T
Symbol
Symbol
I
Symbol
-I
Mounting *
C
I
V
CES
I
I
V
V
C
C
C
t
t
t
t
t
V
t
C
j
stg
GES
C
C
CES
GES
on
r
r(i)
off
f
rr
C
is
GE(th)
CE(sat)
F
ies
oes
res
Rth(j-c)
Rth(j-c)
Rth(c-f)*
pulse
pulse
2
1
Min.
Min.
Characteristics
Characteristics
Rating
-40 to +125
AC 2500 (1min.)
5.5
1200
+150
±20
180
35
25
70
50
25
50
3.5
Typ.
Typ.
3000
0.05
7.2
2.3
2.8
625
550
0.35
0.25
0.1
0.45
0.08
2.5
2.0
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
Max.
Max.
0.69
1.30
8.5
1.2
0.6
1.0
0.3
1.0
0.2
2.6
3.3
0.35
Conditions
V
V
V
Tj=25°C
Tj=125°C
V
V
f=1MHz
V
I
V
R
Tj=25°C
Tj=125°C
I
IGBT
FWD
the base to cooling fin
Conditions
C
F
GE
CE
CE
GE
CE
CC
GE
G
=25A
=25A
=51
=0V, V
=20V, I
=0V
=10V
=0V, V
=600V
=±15V
Equivalent Circuit Schematic
1 3 (P )
1 7 (N )
1 (G u )
3 (G x)
4 (E x )
GE
CE
V
C
2 (E u)
I
=25mA
GE
F
=1200V
=±20V
=25A, V
=15V, I
1 6 (U )
GE
C
5 (G v)
7 (G y)
8 (E y)
=25A
6 (E v)
=0V
IGBT Modules
1 5 (V )
°C/W
°C/W
°C/W
9 (G w )
Unit
Unit
1 1 (G z)
1 2 (E z)
mA
µA
V
V
pF
µs
V
µs
1 0 (E w)
1 4 (W )

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