SI4420DY-T1-E3 Vishay Semiconductors, SI4420DY-T1-E3 Datasheet

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SI4420DY-T1-E3

Manufacturer Part Number
SI4420DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4420DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4420DY-T1-E3
Manufacturer:
PULSE
Quantity:
10
Part Number:
SI4420DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on FR4 Board, t v 10 sec.
i
DS
30
30
(V)
J
Ordering Information: Si4420DY
ti
t A bi
G
S
S
S
1
2
3
4
J
J
a
a
0.013 @ V
0.009 @ V
= 150_C)
= 150_C)
t
a
a
r
DS(on)
Si4420DY-T1 (with Tape and Reel)
Top View
Parameter
Parameter
SO-8
a
a
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
I
Steady State
Steady State
D
t t 10 sec
T
T
T
T
13.5
11
A
A
A
A
(A)
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
G
T
R
R
R
J
V
V
I
P
P
, T
DM
I
I
I
thJA
thJF
GS
DS
D
D
S
N-Channel MOSFET
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% R
D
S
Typical
10 sec
g
13.5
10.8
Tested
2.7
3.0
1.9
33
70
16
−55 to 150
"20
30
50
Vishay Siliconix
Steady State
Maximum
1.36
0.95
9.5
7.5
1.5
42
84
21
Si4420DY
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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