SI4362DY-T1-E3 Vishay Semiconductors, SI4362DY-T1-E3 Datasheet
SI4362DY-T1-E3
Manufacturer Part Number
SI4362DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet
1.SI4362DY-T1-E3.pdf
(6 pages)
Specifications of SI4362DY-T1-E3
Case
SOP8
Date_code
09+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4362DY-T1-E3
Manufacturer:
VISHAY
Quantity:
14 100
Company:
Part Number:
SI4362DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4362DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
DS
30
30
(V)
Ordering Information: Si4362DY
G
S
S
S
J
J
0.0055 @ V
a
a
0.0045 @ V
= 150_C)
= 150_C)
1
2
3
4
Parameter
Parameter
r
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
DS(on)
Top View
a
a
GS
SO-8
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
20
19
(A)
Symbol
Symbol
T
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
D 100% R
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
N-Channel MOSFET
Rectifier Operation
Typical
29
13
D
S
g
Tested
−55 to 150
Limits
"12
2.9
3.5
2.2
30
20
15
60
Maximum
Vishay Siliconix
a
35
16
Si4362DY
www.vishay.com
Unit
Unit
_C/W
_C/W
W
W
A
A
1
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