BYG10K-TR Vishay Semiconductors, BYG10K-TR Datasheet

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BYG10K-TR

Manufacturer Part Number
BYG10K-TR
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of BYG10K-TR

Date_code
05+
Packing_info
SOD-6
Standard Avalanche SMD Rectifier
Features
Applications
Surface mounting
General purpose rectifier
Order Information
Absolute Maximum Ratings
Maximum Thermal Resistance
Document Number 86008
Rev. 6, 23-Apr-03
VISHAY
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Wave and reflow solderable
BYG10D
BYG10G
BYG10J
BYG10K
B
BYG10Y
Reverse voltage = Repetitive peak
reverse voltage
Peak forward surge current
Average forward current
Junction and storage temperature
range
Pulse energy in avalanche mode,
non repetitive (inductive load
switch off)
Junction lead
Junction ambient
YG10M
Part Number
Parameter
Parameter
V
V
V
V
V
V
R
R
R
R
R
R
= 200 V @ I
= 400 V @ I
= 600 V @ I
= 800 V @ I
= 1000 V @ I
= 1600 V @ I
t
I
T
mounted on epoxy-glass hard
tissue
mounted on epoxy-glass hard
tissue, 50 mm
mounted on Al-oxid-ceramic
(Al
p
(BR)R
L
Part Differentiation
= 10 ms, half sinewave
2
= const.
O
3
= 1 A, T
), 50 mm
T
Test condition
Test condition
j
FAV
FAV
FAV
FAV
= 25 °C, unless otherwise specified
FAV
FAV
T
2
j
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
= 25 °C
j
2
35 µm Cu
= 1.5 A
= 1.5 A
= 25 °C, unless otherwise specified
35 µm Cu
BYG10D-
BYG10G
BYG10M
BYG10M
Sub type
BYG10D
BYG10K
BYG10Y
Sub type
BYG10J
V
V
V
V
V
V
R
R
R
R
R
R
T
Symbol
Symbol
j
R
R
R
R
I
= V
= V
= V
= V
= V
= V
I
= T
FSM
E
FAV
thJL
thJA
thJA
thJA
R
RRM
RRM
RRM
RRM
RRM
RRM
Vishay Semiconductors
stg
- 55 to + 150
15 811
Value
Value
1000
1600
200
400
600
800
150
125
100
1.5
30
20
25
BYG10
www.vishay.com
K/W
K/W
K/W
K/W
Unit
Unit
°C
mJ
V
V
V
V
V
V
A
A
1

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