AM29DL800BT70EI Advanced Micro Devices, AM29DL800BT70EI Datasheet

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AM29DL800BT70EI

Manufacturer Part Number
AM29DL800BT70EI
Description
TSOP48
Manufacturer
Advanced Micro Devices

Specifications of AM29DL800BT70EI

Date_code
07+
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Simultaneous Read/Write operations
— Host system can program or erase in one bank,
— Zero latency between read and write operations
— Read-while-erase
— Read-while-program
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29DL800 device
High performance
— Access times as fast as 70 ns
Low current consumption (typical values
at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or read-while-
— 17 mA active program-while-erase-suspended current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard t
Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
— Any combination of sectors can be erased
— Supports full chip erase
Unlock Bypass Program Command
— Reduces overall programming time when
then immediately and simultaneously read from
the other bank
operations for battery-powered applications
erase current
transition from automatic sleep mode to active mode
fourteen 32 Kword sectors in word mode
fourteen 64 Kbyte sectors in byte mode
issuing multiple program command sequences
CE
chip enable access time applies to
Refer to AMD’s Website (www.amd.com) for the latest information.
Sector protection
— Hardware method of locking a sector to prevent
— Sectors can be locked in-system or via
— Temporary Sector Unprotect feature allows code
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 program/erase cycles
guaranteed per sector
Package options
— 44-pin SO
— 48-pin TSOP
— 48-ball FBGA
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and Toggle Bits
— Provides a software method of detecting
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
— No need to suspend if sector is in the other bank
Hardware reset pin (RESET#)
— Hardware method of resetting the device to
any program or erase operation within that sector
programming equipment
changes in previously locked sectors
pre-programs and erases sectors or entire chip
programs and verifies data at specified address
single-power-supply flash standard
program or erase cycle completion
erase cycle completion
reading and programming in other sectors
reading array data
Publication# 21519
Issue Date: November 21, 2000
Rev: C Amendment/+1

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