2SD1758 TLQ Rohm, 2SD1758 TLQ Datasheet

2SD1758 TLQ

Manufacturer Part Number

2SD1758 TLQ

Description

Manufacturer

Rohm

Datasheet

1.2SD1758_TLQ.pdf (4 pages)

Specifications of 2SD1758 TLQ

Case

TO252-3

Date_code

2003+

Current page: 1 of 4
Download datasheet (108Kb)

Transistors

Medium Power Transistor (32V, 2A)

2SD1766 / 2SD1758 / 2SD1862

1) Low V

2) Complements the 2SB1188 / 2SB1182 /

Epitaxial planar type

NPN silicon transistor

∗

1 Single pulse, Pw=20ms

2 When mounted on a 40×40×0.7 mm ceramic board.

3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm

Features

Structure

Absolute maximum ratings (Ta=25°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

（I

2SB1240.

CE(sat)

/ I

CE(sat)

= 0.5V(Typ.)

= 2A / 0.2A）

Parameter

2SD1758

2SD1766

2SD1862

Symbol

Tstg

CBO

CEO

EBO

−55 to +150

or lager.

Limits

∗

150

0.5

2.5

External dimensions (Unit : mm)

2SD1766

2SD1862

Denotes h

0.65Max.

ROHM : MPT3

EIAJ : SC-62

∗

ROHM : ATV

(1)

1.5±0.1

Abbreviated symbol : DB

0.4±0.1

2.54 2.54

2SD1766 / 2SD1758 / 2SD1862

6.8

(2)

W (Tc=25 °C )

(1)

0.2

(3)

A (Pulse)

1.6±0.1

3.0±0.2

4.5

(2)

0.5±0.1

A (DC)

+0.2

−0.1

0.5

Unit

(3)

°C

0.1

0.4±0.1

1.5±0.1

1.05

(1) Emitter

(2) Collector

(3) Base

∗

1.5

(1) Base

(2) Collector

(3) Emitter

2.5

+0.2

−0.1

∗

0.2

0.45

0.4

+0.1

−0.05

0.1

2SD1758

ROHM : CPT3

EIAJ : SC-63

0.75

2.3

0.9

0.2

(1)

6.5

5.1

+ 0.2

− 0.1

(2)

0.2

2.3

(3)

0.2

Rev.A

0.65

C0.5

0.1

(1) Base

(2) Collector

(3) Emitter

0.5

0.55

1.0

2.3

+ 0.2

− 0.1

0.1

0.2

0.1

1/3

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