HMC616LP3E HITTITE [Hittite Microwave Corporation], HMC616LP3E Datasheet

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HMC616LP3E

Manufacturer Part Number
HMC616LP3E
Description
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
Manufacturer
HITTITE [Hittite Microwave Corporation]
Datasheet

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7 - 1
7
Typical Applications
The HmC616lp3(e) is ideal for:
• Cellular/3G and lTe/wimAX/4G
• BTs & infrastructure
• repeaters and femtocells
• public safety radio
• DAB receivers
Functional Diagram
Electrical Specifications,
frequency range
Gain
Gain Variation over Temperature
Noise figure
input return loss
output return loss
output power for 1 dB
Compression (p1dB)
saturated output power (psat)
output Third order intercept (ip3)
supply Current (idd)
* rbias resistor sets current, see application circuit herein
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
parameter
Phone: 978-250-3343
Application Support: Phone: 978-250-3343 or apps@hittite.com
min.
8.5
20
8
T
175 - 230
A
22.5
Typ.
v02.0610
0.5
= +25° C, Rbias = 3.92k Ohms*
10
11
13
20
30
9
Fax: 978-250-3373
max.
0.8
45
Vdd = +3V
min.
15
10
11
230 - 660
0.002
Typ.
15.5
0.5
HMC616LP3 / 616LP3E
20
16
10
15
30
30
Features
low Noise figure: 0.5 dB
High Gain: 24 dB
High output ip3: +37 dBm
single supply: +3V to +5V
50 ohm matched input/output
16 lead 3x3mm QfN package: 9 mm
General Description
The HmC616lp3(e) is a GaAs pHemT mmiC
low Noise Amplifier that is ideal for Cellular/3G and
lTe/wimAX/4G
operating between 175 and 660 mHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output ip3 from a single
supply of +5V. input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HmC616lp3(e) shares
the same package and pinout with the HmC617-
lp3(e) and HmC618lp3(e) lNAs. The HmC616lp3(e)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows
the designer to tailor the linearity performance of the
lNA for each application. The HmC616lp3(e) offers
improved noise figure versus the previously released
HmC356lp3(e).
max.
0.8
45
Order On-line at www.hittite.com
GaAs SMT PHEMT LOW NOISE
min.
12.5
21
11
AMPLIFIER, 175 - 660 MHz
175 - 230
Typ.
17.5
0.5
24
32
90
12
15
9
basestation
max.
115
0.8
Vdd = +5V
min.
15.5
15
14
230 - 660
front-end
0.005
Typ.
19.5
0.5
21
14
10
19
37
90
2
max.
115
0.8
receivers
dB/ °C
Units
mHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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HMC616LP3E Summary of contents

Page 1

Typical Applications The HmC616lp3(e) is ideal for: • Cellular/3G and lTe/wimAX/4G • BTs & infrastructure • repeaters and femtocells • public safety radio • DAB receivers Functional Diagram Electrical Specifications, parameter frequency range Gain Gain Variation over Temperature Noise ...

Page 2

Broadband Gain & Return Loss 25 20 S21 15 10 Vdd= 5V Vdd S22 -5 -10 -15 -20 S11 -25 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) Gain vs. Temperature [ +25C 18 ...

Page 3

Noise Figure vs. Temperature 1 0.9 Vdd=5V Vdd=3V 0.8 0.7 0.6 0.5 0.4 0.3 -40C 0.2 0.2 0.25 0.3 0.35 0.4 FREQUENCY (GHz) Psat vs. Temperature Vdd= Vdd= 0.2 0.25 0.3 ...

Page 4

Power Compression @ 400 MHz 45 40 Pout Gain 35 PAE -18 -16 -14 -12 - INPUT POWER (dBm) Power Compression @ 500 MHz 45 40 Pout Gain 35 ...

Page 5

Gain Low Frequency Tune 0.15 0.175 FREQUENCY (GHz) Output Return Loss Low Frequency Tune 0 -5 -10 -15 Vdd=5V -20 Vdd=3V -25 0.15 0.175 FREQUENCY (GHz) Output IP3 Low Frequency Tune 40 ...

Page 6

Output IP3 vs. Rbias @ 400 MHz Vdd= 3V Vdd 500 1000 Rbias (Ohms) Output IP3 vs. Rbias @ 500 MHz ...

Page 7

Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Vdd ( [1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable. Absolute Maximum ...

Page 8

... Package Information part Number package Body material HmC616lp3 low stress injection molded plastic HmC616lp3e roHs-compliant low stress injection molded plastic [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Application Support: Phone: 978-250-3343 or apps@hittite ...

Page 9

Pin Descriptions pin Number function N rfiN 6 GND 11 rfoUT 8 res 15 Vdd Application Circuit Components for Selected Frequencies Tuned frequency 175 - 230 mHz ...

Page 10

Evaluation PCB List of Materials for Evaluation PCB 120728 item Description J1, J2 pCB mount smA rf Connector J3 pin C1 10nf Capacitor, 0402 pkg. C2 1000 pf Capacitor, 0603 pkg. C3 0.47 µf Capacitor, 0603 pkg. ...

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