HMC616LP3E HITTITE [Hittite Microwave Corporation], HMC616LP3E Datasheet - Page 7

• Manufacturer Part Number: HMC616LP3E
• Description: GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
• Manufacturer: HITTITE [Hittite Microwave Corporation]

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Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
Absolute Maximum Ratings
[1] with Vdd = 3V, rbias < 1k ohm is not recommended and may result in the lNA becoming conditionally stable.
Drain Bias Voltage (Vdd)
rf input power (rfiN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous pdiss (T= 85 °C)
(derate 8.93 mw/°C above 85 °C)
Thermal resistance
(channel to ground paddle)
storage Temperature
operating Temperature
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Vdd (V)
3V
5V
eleCTrosTATiC seNsiTiVe DeViCe
oBserVe HANDliNG preCAUTioNs
Phone: [phone]
Application Support: Phone: [phone] or [e-mail]
1k
min
0
[1]
+6 V
+10 dBm
150 °C
0.58 w
112 °C/w
-65 to +150 °C
-40 to +85 °C
v02.0610
open Circuit
open Circuit
rbias (Ω)
Fax: [phone]
max
recommended
3.92k
3.92k
2.7k
4.7k
10k
820
10k
Typical Supply
Current vs. Vdd (Rbias = 3.92kΩ)
Note: Amplifier will operate over full voltage range shown above.
2k
Order On-line at www.hittite.com
GaAs SMT PHEMT LOW NOISE
HMC616LP3 / 616LP3E
Vdd (V)
AMPLIFIER, 175 - 660 MHz
2.7
3.0
3.3
4.5
5.0
5.5
idd (mA)
27
31
33
39
73
84
91
95
idd (mA)
100
20
30
40
80
90