NE71300-L NEC [NEC], NE71300-L Datasheet - Page 2

• Manufacturer Part Number: NE71300-L
• Description: L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
2
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut off Voltage
Transconductance
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Output Power at 1 dB Gain
Compression Point
Thermal Resistance
CHARACTERISTIC
SYMBOL
P
V
I
I
GS (off)
o (1 dB)
gm
NF
Ga
NF
Ga
R
GSO
DSS
th
PACKAGE DIMENSIONS (Unit : mm) [NE71383B]
A
4.0 MIN.
MIN.
11.5
2
8.0
= 25 °C)
20
20
0.5
TYP.
14.0
14.5
3
1.0
0.6
1.6
9.5
50
40
1.88
1.1
1.0
0.1
1.
2.
3.
4.
0.3
Source
Drain
Source
Gate
1
MAX.
120
190
450
0.7
1.8
10
3.5
4.0 MIN.
4
UNIT
°C/W
°C/W
dBm
mA
mS
dB
dB
dB
dB
V
A
V
V
V
V
f = 4 GHz
f = 12 GHz
f = 12 GHz
NE71300
NE71383B
GS
DS
DS
DS
= 5 V
= 3 V, V
= 3 V, I
= 3 V, I
TEST CONDITIONS
D
D
GS
= 100 A
= 10 mA
V
I
V
Channel to case
D
I
D
= 0 V
DS
DS
= 10 mA
= 30 mA
= 3 V
= 3 V
NE713