ATF-26836-STR HP [Agilent(Hewlett-Packard)], ATF-26836-STR Datasheet

ATF-26836-STR

Manufacturer Part Number

ATF-26836-STR

Description

2-16 GHz General Purpose Gallium Arsenide FET

Manufacturer

HP [Agilent(Hewlett-Packard)]

Datasheet

1.ATF-26836-STR.pdf (4 pages)

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2 – 16 GHz General Purpose

Gallium Arsenide FET

Technical Data

Features

• High Output Power:

• High Gain:

• Cost Effective Ceramic

• Tape-and-Reel Packaging

Electrical Specifications, T

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”

Symbol

DSS

18.0 dBm Typical P

9.0 dB Typical G

Microstrip Package

Option Available

1 dB

Tuned Small Signal Gain: V

Optimum Noise Figure: V

Gain @ NF

Power Output @ 1 dB Gain Compression:

Transconductance: V

Saturated Drain Current: V

Pinch-off Voltage: V

= 5 V, I

at 12 GHz

[1]

1 dB

: V

= 30 mA

at 12 GHz

Parameters and Test Conditions

= 3 V, I

= 3 V, V

Description

The ATF-26836 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a cost effective

microstrip package. This device is

designed for use in oscillator

applications and general purpose

amplifier applications in the

2-16 GHz frequency range.

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

250 microns. Proven gold based

metallization systems and nitride

passivation assure a rugged,

reliable device.

= 25 C

= 10 mA

= 3 V, I

= 3 V, V

= 5 V, I

= 1 mA

= 0 V

= 10 mA

= 30 mA

= 0 V

5-67

f = 12.0 GHz

f = 12.0 GHz dBm

ATF-26836

36 micro-X Package

mmho

Units

Min.

15.0

-3.5

7.0

Typ. Max.

18.0

-1.5

5965-8704E

9.0

2.2

6.0

-0.5

Related parts for ATF-26836-STR

ATF-26836-STR Summary of contents

Page 1

... Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.” Description The ATF-26836 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range ...

Page 2

... P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: Part Number Ordering Information Part Number Devices Per Reel ATF-26836-TR1 1000 ATF-26836-STR ATF-26836 Typical Performance MSG 2.0 4.0 6.0 8.0 10.0 12.0 16.0 FREQUENCY (GHz) Figure 1. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs ...

Page 3

Typical Scattering Parameters, Freq GHz Mag. Ang. 2.0 .94 -38 3.0 .90 -55 4.0 .84 -72 5.0 .75 -92 6.0 .64 -117 7.0 .52 -155 8.0 .49 163 9.0 .52 126 10.0 .56 100 11.0 .61 78 12.0 ...

Page 4

Package Dimensions 2.15 (0.085) SOURCE 2.11 (0.083) DIA. 4 DRAIN 3 1 GATE 0.508 (0.020) SOURCE 2 1.45 0.25 2.54 (0.057 0.010) (0.100) 0.15 0.05 (0.006 0.002) 0.56 4.57 0.25 (0.022) 0.180 0.010 Notes: 1. Dimensions are in ...

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